FKD3006 Specs and Replacement
Type Designator: FKD3006
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 53 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 267 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO252
FKD3006 substitution
- MOSFET ⓘ Cross-Reference Search
FKD3006 datasheet
fkd3006.pdf
FKD3006 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline 30V 5.5m 80A Advanced high cell density Trench technology Description TO252 Pin Configuration The FKD3006 is the high cell density trenched N-ch MOSFETs, wh... See More ⇒
Detailed specifications: 8N06D, M4N65TF, FS8205, FMD5N50E5, FKBA3004, FKBA3006, FKBB3002, FKBB3004, AO3400, DM4N65E, DM4N65E-F, DM5N65E, DM5N65E-F, DM7N65C, DM7N65C-F, DM8N65C, DM8N65C-F
Keywords - FKD3006 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: STM4800S | SI2323DS
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