FKD3006 Datasheet and Replacement
Type Designator: FKD3006
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 53 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 267 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO252
FKD3006 substitution
FKD3006 Datasheet (PDF)
fkd3006.pdf
FKD3006 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline 30V 5.5m 80A Advanced high cell density Trench technology Description TO252 Pin Configuration The FKD3006 is the high cell density trenched N-ch MOSFETs, wh
Datasheet: 8N06D , M4N65TF , FS8205 , FMD5N50E5 , FKBA3004 , FKBA3006 , FKBB3002 , FKBB3004 , AO3400 , DM4N65E , DM4N65E-F , DM5N65E , DM5N65E-F , DM7N65C , DM7N65C-F , DM8N65C , DM8N65C-F .
History: MDP06N033TH | BSD223P | MDP12N50TH | IRF8721G
Keywords - FKD3006 MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: MDP06N033TH | BSD223P | MDP12N50TH | IRF8721G
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