All MOSFET. DM4N65E Datasheet

 

DM4N65E Datasheet and Replacement


   Type Designator: DM4N65E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 53.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO220 TO262 TO263
 

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DM4N65E Datasheet (PDF)

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DM4N65E

N MOS /N-Channel Power MOSFET DM4N65E RoHS FEATURESLOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY

Datasheet: M4N65TF , FS8205 , FMD5N50E5 , FKBA3004 , FKBA3006 , FKBB3002 , FKBB3004 , FKD3006 , IRF3710 , DM4N65E-F , DM5N65E , DM5N65E-F , DM7N65C , DM7N65C-F , DM8N65C , DM8N65C-F , DM10N65C .

History: TMP4N60 | WMK25N65EM | IRF1010EZS | AOT500 | FQB6N80 | AOT5N60 | FXN25S55GF

Keywords - DM4N65E MOSFET datasheet

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