DM5N65E-F MOSFET. Datasheet pdf. Equivalent
Type Designator: DM5N65E-F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13 nC
Cossⓘ - Output Capacitance: 53.8 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO220F
DM5N65E-F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DM5N65E-F Datasheet (PDF)
7.1. Size:4695K desay
dm5n65e.pdf
dm5n65e.pdf
N MOS /N-Channel Power MOSFET DM5N65E RoHS FEATURESLOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
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