DM12N65C-2 PDF and Equivalents Search

 

DM12N65C-2 Specs and Replacement

Type Designator: DM12N65C-2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: TO262 TO263

DM12N65C-2 substitution

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DM12N65C-2 datasheet

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DM12N65C-2

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Detailed specifications: DM7N65C-F, DM8N65C, DM8N65C-F, DM10N65C, DM10N65C-F, DM10N65C-2, DM12N65C, DM12N65C-F, 2SK3878, EMB03N03HR, EMB09N03V, EMB09P03V, EMB12N04V, EMB12P03G, EMB12P03V, EMB17A03G, EMB17C03G

Keywords - DM12N65C-2 MOSFET specs

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