EMB22A04G Specs and Replacement
Type Designator: EMB22A04G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 83 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SOP8
EMB22A04G substitution
- MOSFET ⓘ Cross-Reference Search
EMB22A04G datasheet
emb22a04g.pdf
EMB22A04G Dual N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary BVDSS 40V RDSON (MAX.) 22m ID 8A Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 20 V TA = 25 C 8 Co... See More ⇒
Detailed specifications: EMB09P03V, EMB12N04V, EMB12P03G, EMB12P03V, EMB17A03G, EMB17C03G, EMB20N03V, EMB20P03G, SKD502T, EMBA5P06J, EMF02P02H, EMF03N02HR, EMF20A02G, EMF20B02V, EMF50N03JS, AP2307GN, AP2311GN
Keywords - EMB22A04G MOSFET specs
EMB22A04G cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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