EMB22A04G MOSFET. Datasheet pdf. Equivalent
Type Designator: EMB22A04G
Marking Code: B22A04
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14.5 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 83 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SOP8
EMB22A04G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
EMB22A04G Datasheet (PDF)
..1. Size:188K emc
emb22a04g.pdf
emb22a04g.pdf
EMB22A04GDualNChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:BVDSS40VRDSON(MAX.)22mID8APbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TA=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS20VTA=25C8Co
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