All MOSFET. EMB22A04G Datasheet

 

EMB22A04G Datasheet and Replacement


   Type Designator: EMB22A04G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 83 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SOP8
 

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EMB22A04G Datasheet (PDF)

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EMB22A04G

EMB22A04GDualNChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:BVDSS40VRDSON(MAX.)22mID8APbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TA=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS20VTA=25C8Co

Datasheet: EMB09P03V , EMB12N04V , EMB12P03G , EMB12P03V , EMB17A03G , EMB17C03G , EMB20N03V , EMB20P03G , IRF9540N , EMBA5P06J , EMF02P02H , EMF03N02HR , EMF20A02G , EMF20B02V , EMF50N03JS , AP2307GN , AP2311GN .

History: IRF150B | WMK07N105C2 | STB60NF06LT4 | STG8820 | NCE16P40Q | FQU4N50TUWS | SSP80R240SFD

Keywords - EMB22A04G MOSFET datasheet

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