All MOSFET. EMB22A04G Datasheet

 

EMB22A04G MOSFET. Datasheet pdf. Equivalent


   Type Designator: EMB22A04G
   Marking Code: B22A04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14.5 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 83 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SOP8

 EMB22A04G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

EMB22A04G Datasheet (PDF)

 ..1. Size:188K  emc
 emb22a04g.pdf

EMB22A04G EMB22A04G

EMB22A04GDualNChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:BVDSS40VRDSON(MAX.)22mID8APbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TA=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS20VTA=25C8Co

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IXFM13N80

 

 
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