All MOSFET. EMBA5P06J Datasheet

 

EMBA5P06J Datasheet and Replacement


   Type Designator: EMBA5P06J
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOT23
 

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EMBA5P06J Datasheet (PDF)

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EMBA5P06J

EMBA5P06JPChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:DBVDSS60VRDSON(MAX.)150mID2.2AGSPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TA=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS20VTA=25

Datasheet: EMB12N04V , EMB12P03G , EMB12P03V , EMB17A03G , EMB17C03G , EMB20N03V , EMB20P03G , EMB22A04G , IRFB3607 , EMF02P02H , EMF03N02HR , EMF20A02G , EMF20B02V , EMF50N03JS , AP2307GN , AP2311GN , AP4034GYT-HF-3 .

History: FQA13N80-F109

Keywords - EMBA5P06J MOSFET datasheet

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