EMBA5P06J Specs and Replacement
Type Designator: EMBA5P06J
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 66 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: SOT23
EMBA5P06J substitution
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EMBA5P06J datasheet
emba5p06j.pdf
EMBA5P06J P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 60V RDSON (MAX.) 150m ID 2.2A G S Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 20 V TA = 25 ... See More ⇒
Detailed specifications: EMB12N04V, EMB12P03G, EMB12P03V, EMB17A03G, EMB17C03G, EMB20N03V, EMB20P03G, EMB22A04G, K4145, EMF02P02H, EMF03N02HR, EMF20A02G, EMF20B02V, EMF50N03JS, AP2307GN, AP2311GN, AP4034GYT-HF-3
Keywords - EMBA5P06J MOSFET specs
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