All MOSFET. EMF02P02H Datasheet

 

EMF02P02H Datasheet and Replacement


   Type Designator: EMF02P02H
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 1303 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: DFN5X6
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EMF02P02H Datasheet (PDF)

 ..1. Size:287K  1
emf02p02h.pdf pdf_icon

EMF02P02H

EMF02P02H P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: DBVDSS 20V RDSON (MAX.) 3.2m ID 100A G SUIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 12 V TC = 25 C 100 Continuous Dra

 ..2. Size:287K  emc
emf02p02h.pdf pdf_icon

EMF02P02H

EMF02P02H P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: DBVDSS 20V RDSON (MAX.) 3.2m ID 100A G SUIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 12 V TC = 25 C 100 Continuous Dra

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SML40W44 | SM2F04NSU | BRCS200P03DP | CJS8804 | MTN3410J3 | HM5N20I | TSM4424CS

Keywords - EMF02P02H MOSFET datasheet

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