All MOSFET. EMF02P02H Datasheet

 

EMF02P02H MOSFET. Datasheet pdf. Equivalent


   Type Designator: EMF02P02H
   Marking Code: F02P02
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 202 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 1303 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: DFN5X6

 EMF02P02H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

EMF02P02H Datasheet (PDF)

 ..1. Size:287K  1
 emf02p02h.pdf

EMF02P02H EMF02P02H

EMF02P02H P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: DBVDSS 20V RDSON (MAX.) 3.2m ID 100A G SUIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 12 V TC = 25 C 100 Continuous Dra

 ..2. Size:287K  emc
 emf02p02h.pdf

EMF02P02H EMF02P02H

EMF02P02H P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: DBVDSS 20V RDSON (MAX.) 3.2m ID 100A G SUIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 12 V TC = 25 C 100 Continuous Dra

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IRFS3607 | BUK9675-100A

 

 
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