EMF02P02H Datasheet and Replacement
Type Designator: EMF02P02H
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 69 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 1303 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
Package: DFN5X6
EMF02P02H substitution
EMF02P02H Datasheet (PDF)
emf02p02h.pdf
EMF02P02H P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: DBVDSS 20V RDSON (MAX.) 3.2m ID 100A G SUIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 12 V TC = 25 C 100 Continuous Dra
emf02p02h.pdf
EMF02P02H P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: DBVDSS 20V RDSON (MAX.) 3.2m ID 100A G SUIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 12 V TC = 25 C 100 Continuous Dra
Datasheet: EMB12P03G , EMB12P03V , EMB17A03G , EMB17C03G , EMB20N03V , EMB20P03G , EMB22A04G , EMBA5P06J , TK10A60D , EMF03N02HR , EMF20A02G , EMF20B02V , EMF50N03JS , AP2307GN , AP2311GN , AP4034GYT-HF-3 , AP4410M .
History: LS4117
Keywords - EMF02P02H MOSFET datasheet
EMF02P02H cross reference
EMF02P02H equivalent finder
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EMF02P02H replacement
History: LS4117
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