All MOSFET. EMF02P02H Datasheet

 

EMF02P02H Datasheet and Replacement


   Type Designator: EMF02P02H
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 1303 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: DFN5X6
 

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EMF02P02H Datasheet (PDF)

 ..1. Size:287K  1
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EMF02P02H

EMF02P02H P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: DBVDSS 20V RDSON (MAX.) 3.2m ID 100A G SUIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 12 V TC = 25 C 100 Continuous Dra

 ..2. Size:287K  emc
 emf02p02h.pdf pdf_icon

EMF02P02H

EMF02P02H P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: DBVDSS 20V RDSON (MAX.) 3.2m ID 100A G SUIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 12 V TC = 25 C 100 Continuous Dra

Datasheet: EMB12P03G , EMB12P03V , EMB17A03G , EMB17C03G , EMB20N03V , EMB20P03G , EMB22A04G , EMBA5P06J , AO4407 , EMF03N02HR , EMF20A02G , EMF20B02V , EMF50N03JS , AP2307GN , AP2311GN , AP4034GYT-HF-3 , AP4410M .

History: SI2304DDS | 2SK247 | SML20J97 | CJK3400A | ZXMP10A17E6Q | SI2305ADS | SM1A63NHK

Keywords - EMF02P02H MOSFET datasheet

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