All MOSFET. EMF03N02HR Datasheet

 

EMF03N02HR Datasheet and Replacement


   Type Designator: EMF03N02HR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 71 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 377 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: DFN5X6
 

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EMF03N02HR Datasheet (PDF)

 ..1. Size:297K  1
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EMF03N02HR

EMF03N02HR(Preliminary) N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: DBVDSS 20V RDSON (MAX.) 4.0m ID 71A G SUIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 10 V TC = 25 C 71 Contin

 ..2. Size:297K  emc
 emf03n02hr.pdf pdf_icon

EMF03N02HR

EMF03N02HR(Preliminary) N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: DBVDSS 20V RDSON (MAX.) 4.0m ID 71A G SUIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 10 V TC = 25 C 71 Contin

Datasheet: EMB12P03V , EMB17A03G , EMB17C03G , EMB20N03V , EMB20P03G , EMB22A04G , EMBA5P06J , EMF02P02H , RFP50N06 , EMF20A02G , EMF20B02V , EMF50N03JS , AP2307GN , AP2311GN , AP4034GYT-HF-3 , AP4410M , AP4435GM .

History: BUZ102 | SML5020BN | RP1E100XN | PFF12N65 | STP180N4F6 | IRLL014PBF

Keywords - EMF03N02HR MOSFET datasheet

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