All MOSFET. EMF03N02HR Datasheet

 

EMF03N02HR Datasheet and Replacement


   Type Designator: EMF03N02HR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 71 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 377 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: DFN5X6
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EMF03N02HR Datasheet (PDF)

 ..1. Size:297K  1
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EMF03N02HR

EMF03N02HR(Preliminary) N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: DBVDSS 20V RDSON (MAX.) 4.0m ID 71A G SUIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 10 V TC = 25 C 71 Contin

 ..2. Size:297K  emc
 emf03n02hr.pdf pdf_icon

EMF03N02HR

EMF03N02HR(Preliminary) N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: DBVDSS 20V RDSON (MAX.) 4.0m ID 71A G SUIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 10 V TC = 25 C 71 Contin

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History: NDF04N62Z | SRT10N160LD | NCE30P12BS | APT10021JFLL | NP180N04TUJ | SSW65R190S2 | SM4186T9RL

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