EMF03N02HR Specs and Replacement
Type Designator: EMF03N02HR
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 71 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 377 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
Package: DFN5X6
EMF03N02HR substitution
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EMF03N02HR datasheet
emf03n02hr.pdf
EMF03N02HR (Preliminary) N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 20V RDSON (MAX.) 4.0m ID 71A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 10 V TC = 25 C 71 Contin... See More ⇒
emf03n02hr.pdf
EMF03N02HR (Preliminary) N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 20V RDSON (MAX.) 4.0m ID 71A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 10 V TC = 25 C 71 Contin... See More ⇒
Detailed specifications: EMB12P03V, EMB17A03G, EMB17C03G, EMB20N03V, EMB20P03G, EMB22A04G, EMBA5P06J, EMF02P02H, AON7410, EMF20A02G, EMF20B02V, EMF50N03JS, AP2307GN, AP2311GN, AP4034GYT-HF-3, AP4410M, AP4435GM
Keywords - EMF03N02HR MOSFET specs
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