EMF50N03JS PDF and Equivalents Search

 

EMF50N03JS Specs and Replacement

Type Designator: EMF50N03JS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.04 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 52 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOT23

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EMF50N03JS datasheet

 ..1. Size:182K  emc
 emf50n03js.pdf pdf_icon

EMF50N03JS

EMF50N03JS N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 50m ID 3.5A G S Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 12 V TA = 25 C 3... See More ⇒

Detailed specifications: EMB20N03V, EMB20P03G, EMB22A04G, EMBA5P06J, EMF02P02H, EMF03N02HR, EMF20A02G, EMF20B02V, IRF1010E, AP2307GN, AP2311GN, AP4034GYT-HF-3, AP4410M, AP4435GM, AP72T03GH-HF, AP9579GP, AP9963GP

Keywords - EMF50N03JS MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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