All MOSFET. EMF50N03JS Datasheet

 

EMF50N03JS Datasheet and Replacement


   Type Designator: EMF50N03JS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.04 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT23
 

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EMF50N03JS Datasheet (PDF)

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EMF50N03JS

EMF50N03JSNChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:DBVDSS30VRDSON(MAX.)50mID3.5AGSPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TA=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS12VTA=25C3

Datasheet: EMB20N03V , EMB20P03G , EMB22A04G , EMBA5P06J , EMF02P02H , EMF03N02HR , EMF20A02G , EMF20B02V , IRF530 , AP2307GN , AP2311GN , AP4034GYT-HF-3 , AP4410M , AP4435GM , AP72T03GH-HF , AP9579GP , AP9963GP .

History: STG8820 | STM4820 | APT31N80JC3 | 4N90L-TF3T-T | IPP147N03LG | KF3N80F | HUF75639S3ST

Keywords - EMF50N03JS MOSFET datasheet

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