EMF50N03JS MOSFET. Datasheet pdf. Equivalent
Type Designator: EMF50N03JS
Marking Code: 17*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.04 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 3.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5.2 nC
trⓘ - Rise Time: 2.5 nS
Cossⓘ - Output Capacitance: 52 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOT23
EMF50N03JS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
EMF50N03JS Datasheet (PDF)
..1. Size:182K emc
emf50n03js.pdf
emf50n03js.pdf
EMF50N03JSNChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:DBVDSS30VRDSON(MAX.)50mID3.5AGSPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TA=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS12VTA=25C3
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
