MTA50P01SN3 MOSFET. Datasheet pdf. Equivalent
Type Designator: MTA50P01SN3
Marking Code: A5P1*
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 14 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 4.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.7 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 163 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0565 Ohm
Package: SOT23
MTA50P01SN3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTA50P01SN3 Datasheet (PDF)
mta50p01sn3.pdf
Spec. No. : C101N3 Issued Date : 2015.09.09 CYStech Electronics Corp. Revised Date : 2018.07.05 Page No. : 1/9 -14V P-Channel Enhancement Mode MOSFET BVDSS -14V MTA50P01SN3 ID @ VGS=-10V, TA=25C -4.3A RDSON@VGS=-4.5V, ID=-3.6A 42.3m(typ) RDSON@VGS=-2.5V, ID=-3.2A 62.9m(typ) Features Low gate charge Compact and low profile SOT-23 package Advanced
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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