All MOSFET. MTA50P01SN3 Datasheet

 

MTA50P01SN3 Datasheet and Replacement


   Type Designator: MTA50P01SN3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 14 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 4.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 163 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0565 Ohm
   Package: SOT23
 

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MTA50P01SN3 Datasheet (PDF)

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MTA50P01SN3

Spec. No. : C101N3 Issued Date : 2015.09.09 CYStech Electronics Corp. Revised Date : 2018.07.05 Page No. : 1/9 -14V P-Channel Enhancement Mode MOSFET BVDSS -14V MTA50P01SN3 ID @ VGS=-10V, TA=25C -4.3A RDSON@VGS=-4.5V, ID=-3.6A 42.3m(typ) RDSON@VGS=-2.5V, ID=-3.2A 62.9m(typ) Features Low gate charge Compact and low profile SOT-23 package Advanced

Datasheet: AP72T03GH-HF , AP9579GP , AP9963GP , AP9977GM-HF , AP9985GM-HF , AP9T18GH-HF , FBM75N68P , FBM75N68B , P0903BDG , MTB028N10QNCQ8 , MTB030N10RQ8 , MTB095N10KRL3 , MTB095N10KRN3 , MTB1D0N03RH8 , MTB20N06KJ3 , MTB280N15L3 , MTB340N11N6 .

History: R5007FNX

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