MTB280N15L3 MOSFET. Datasheet pdf. Equivalent
Type Designator: MTB280N15L3
Marking Code: B280N15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8.1 nC
trⓘ - Rise Time: 16.2 nS
Cossⓘ - Output Capacitance: 25 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: SOT223
MTB280N15L3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTB280N15L3 Datasheet (PDF)
..1. Size:644K cystek
mtb280n15l3.pdf
mtb280n15l3.pdf
Spec. No. : C874L3 Issued Date : 2018.09.04 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 150V MTB280N15L3 2A ID@VGS=10V,TA=25C RDSON@VGS=10V, ID=1.5A 297m(typ) RDSON@VGS=4.5V, ID=1A 304m(typ) Description The MTB280N15L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combin
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
