MTB280N15L3 PDF and Equivalents Search

 

MTB280N15L3 Specs and Replacement

Type Designator: MTB280N15L3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.2 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: SOT223

MTB280N15L3 substitution

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MTB280N15L3 datasheet

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 mtb280n15l3.pdf pdf_icon

MTB280N15L3

Spec. No. C874L3 Issued Date 2018.09.04 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 150V MTB280N15L3 2A ID@VGS=10V,TA=25 C RDSON@VGS=10V, ID=1.5A 297m (typ) RDSON@VGS=4.5V, ID=1A 304m (typ) Description The MTB280N15L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combin... See More ⇒

Detailed specifications: FBM75N68B, MTA50P01SN3, MTB028N10QNCQ8, MTB030N10RQ8, MTB095N10KRL3, MTB095N10KRN3, MTB1D0N03RH8, MTB20N06KJ3, 18N50, MTB340N11N6, MTC3586BDFA6, MTC3587DL8, MTC3588BDFA6, MTC3588N6, MTC6601N6, MTE030N15RQ8, MTE050N15BRH8

Keywords - MTB280N15L3 MOSFET specs

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