MTB340N11N6 Specs and Replacement
Type Designator: MTB340N11N6
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16.2 nS
Cossⓘ - Output Capacitance: 21 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm
Package: SOT26
MTB340N11N6 substitution
- MOSFET ⓘ Cross-Reference Search
MTB340N11N6 datasheet
Detailed specifications: MTA50P01SN3, MTB028N10QNCQ8, MTB030N10RQ8, MTB095N10KRL3, MTB095N10KRN3, MTB1D0N03RH8, MTB20N06KJ3, MTB280N15L3, 20N50, MTC3586BDFA6, MTC3587DL8, MTC3588BDFA6, MTC3588N6, MTC6601N6, MTE030N15RQ8, MTE050N15BRH8, MTE050N15BRV8
Keywords - MTB340N11N6 MOSFET specs
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MTB340N11N6 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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