All MOSFET. MTB340N11N6 Datasheet

 

MTB340N11N6 Datasheet and Replacement


   Type Designator: MTB340N11N6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16.2 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm
   Package: SOT26
 

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MTB340N11N6 Datasheet (PDF)

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MTB340N11N6

Spec. No. : C580N6 Issued Date : 2017.01.23 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode MOSFET MTB340N11N6 BVDSS 110VID@VGS=10V, TC=25C 1.9A ID@VGS=10V, TA=25C 1.5A Features340m VGS=10V, ID=1.5A Simple drive requirement RDSON(TYP) 355m VGS=4.5V, ID=1A Low on-resistance Small package outline

Datasheet: MTA50P01SN3 , MTB028N10QNCQ8 , MTB030N10RQ8 , MTB095N10KRL3 , MTB095N10KRN3 , MTB1D0N03RH8 , MTB20N06KJ3 , MTB280N15L3 , 2N60 , MTC3586BDFA6 , MTC3587DL8 , MTC3588BDFA6 , MTC3588N6 , MTC6601N6 , MTE030N15RQ8 , MTE050N15BRH8 , MTE050N15BRV8 .

History: SSF1006A | AP70T03GH-HF | HFD2N65S | HFD1N65S | TMP120N08A | 2SK869 | AP65PN2R6P

Keywords - MTB340N11N6 MOSFET datasheet

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