MTC3587DL8 PDF and Equivalents Search

 

MTC3587DL8 Specs and Replacement

Type Designator: MTC3587DL8

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.6 nS

Cossⓘ - Output Capacitance: 48 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: DFNWB3X2-8L-B

MTC3587DL8 substitution

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MTC3587DL8 datasheet

 ..1. Size:512K  cystek
 mtc3587dl8.pdf pdf_icon

MTC3587DL8

Spec. No. C093L8 Issued Date 2016.09.30 CYStech Electronics Corp. Revised Date 2017.09.29 Page No. 1/13 N- and P-Channel Enhancement Mode Power MOSFET MTC3587DL8 N-CH P-CH BVDSS 20V -20V 4.9A(VGS=4.5V) -3.9A(VGS=-4.5 V) ID @ TA=25 C Features 32m (VGS=4.5V) 50m (VGS=-4.5V) Simple drive requirement RDSON(TYP.) 43m (VGS=2.5V) 62m (VGS=-2.5V) Low gat... See More ⇒

 8.1. Size:408K  cystek
 mtc3585g6.pdf pdf_icon

MTC3587DL8

Spec. No. C416G6 Issued Date 2007.07.13 CYStech Electronics Corp. Revised Date 2013.11.13 Page No. 1/13 N- AND P-Channel Enhancement Mode MOSFET N-CH P-CH MTC3585G6 BVDSS 20V -20V ID 4.5A(VGS=4.5V) -3A(VGS=-4.5 V) 27m (VGS=4.5V) 78m (VGS=-4.5V) RDSON(TYP.) 37m (VGS=2.5V) 115m (VGS=-2.5V) 82m (VGS=1.5V) 280m (VGS=-1.5V) Features Simple drive requirement ... See More ⇒

 8.2. Size:403K  cystek
 mtc3585n6.pdf pdf_icon

MTC3587DL8

Spec. No. C416G6 Issued Date 2007.07.12 CYStech Electronics Corp. Revised Date 2013.09.06 Page No. 1/12 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CH MTC3585N6 BVDSS 20V -20V ID 4.5A(VGS=4.5V) -3A(VGS=-4.5 V) 27m (VGS=4.5V) 78m (VGS=-4.5V) RDSON(TYP.) 37m (VGS=2.5V) 115m (VGS=-2.5V) 82m (VGS=1.5V) 280m (VGS=-1.5V) Description The MTC3585N6 consist... See More ⇒

 8.3. Size:431K  cystek
 mtc3586dfa6.pdf pdf_icon

MTC3587DL8

Spec. No. C835DFA6 Issued Date 2013.06.03 CYStech Electronics Corp. Revised Date 2013.10.30 Page No. 1/13 N- AND P-Channel Enhancement Mode MOSFET N-CH P-CH MTC3586DFA6 BVDSS 20V -20V ID 5A(VGS=4.5V) -3.3A(VGS=-4.5 V) 27m (VGS=4.5V) 78m (VGS=-4.5V) RDSON(TYP.) 37m (VGS=2.5V) 115m (VGS=-2.5V) Description 82m (VGS=1.5V) 280m (VGS=-1.5V) The MTC3586DFA6 consis... See More ⇒

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Detailed specifications: MTB030N10RQ8, MTB095N10KRL3, MTB095N10KRN3, MTB1D0N03RH8, MTB20N06KJ3, MTB280N15L3, MTB340N11N6, MTC3586BDFA6, IRF2807, MTC3588BDFA6, MTC3588N6, MTC6601N6, MTE030N15RQ8, MTE050N15BRH8, MTE050N15BRV8, MTE65N20H8, MTEF1P15AV8

Keywords - MTC3587DL8 MOSFET specs

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