MTC3587DL8 - Даташиты. Аналоги. Основные параметры

Spec. No. : C093L8 Issued Date : 2016.09.30 CYStech Electronics Corp. Revised Date : 2017.09.29 Page No. : 1/13 N- and P-Channel Enhancement Mode Power MOSFET MTC3587DL8 N-CH P-CHBVDSS 20V -20V 4.9A(VGS=4.5V) -3.9A(VGS=-4.5 V) ID @ TA=25C Features 32m(VGS=4.5V) 50m(VGS=-4.5V) Simple drive requirement RDSON(TYP.) 43m(VGS=2.5V) 62m(VGS=-2.5V) Low gat

Spec. No. : C416G6 Issued Date : 2007.07.13 CYStech Electronics Corp.Revised Date :2013.11.13 Page No. : 1/13 N- AND P-Channel Enhancement Mode MOSFET N-CH P-CHMTC3585G6 BVDSS 20V -20VID 4.5A(VGS=4.5V) -3A(VGS=-4.5 V) 27m(VGS=4.5V) 78m(VGS=-4.5V) RDSON(TYP.) 37m(VGS=2.5V) 115m(VGS=-2.5V)82m(VGS=1.5V) 280m(VGS=-1.5V)Features Simple drive requirement

Spec. No. : C416G6 Issued Date : 2007.07.12 CYStech Electronics Corp.Revised Date :2013.09.06 Page No. : 1/12 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CHMTC3585N6 BVDSS 20V -20VID 4.5A(VGS=4.5V) -3A(VGS=-4.5 V) 27m(VGS=4.5V) 78m(VGS=-4.5V) RDSON(TYP.) 37m(VGS=2.5V) 115m(VGS=-2.5V)82m(VGS=1.5V) 280m(VGS=-1.5V)Description The MTC3585N6 consist

Spec. No. : C835DFA6 Issued Date : 2013.06.03 CYStech Electronics Corp.Revised Date : 2013.10.30 Page No. : 1/13 N- AND P-Channel Enhancement Mode MOSFET N-CH P-CHMTC3586DFA6 BVDSS 20V -20VID 5A(VGS=4.5V) -3.3A(VGS=-4.5 V) 27m(VGS=4.5V) 78m(VGS=-4.5V) RDSON(TYP.) 37m(VGS=2.5V) 115m(VGS=-2.5V)Description 82m(VGS=1.5V) 280m(VGS=-1.5V)The MTC3586DFA6 consis

Spec. No. : C102N6 Issued Date : 2015.08.13 CYStech Electronics Corp.Revised Date : 2017.03.30 Page No. : 1/12 N- And P-Channel Enhancement Mode Power MOSFET N-CH P-CHMTC3588N6 BVDSS 14V -14VID @ TA=25 C 5.4A(VGS=4.5V) -3.6A(VGS=-4.5 V) 17.6m(VGS=4.5V) 45.1m(VGS=-4.5V) RDSON(TYP.) 24.7m(VGS=2.5V) 65.6m(VGS=-2.5V) Features Simple drive requirement

Spec. No. : C102DFA6 Issued Date : 2015.12.03 CYStech Electronics Corp. Revised Date : 2018.05.03 Page No. : 1/13 N- And P-Channel Enhancement Mode MOSFET N-CH P-CHMTC3588BDFA6 14V -14VBVDSS 6A(VGS=4.5V) -4A(VGS=-4.5 V) ID 16.6m(VGS=4.5V) 43m(VGS=-4.5V) 23.7m(VGS=2.5V) 63.6m(VGS=-2.5V) RDSON(TYP.) 38.5m(VGS=1.8V) 86.5m(VGS=-1.8V) 66.3m(VGS=1.5V) 15

Spec. No. : C835DFA6 Issued Date : 2015.11.02 CYStech Electronics Corp.Revised Date : 2018.05.03 Page No. : 1/13 N- AND P-Channel Enhancement Mode MOSFET N-CH P-CHMTC3586BDFA6 BVDSS 20V -20VID 5A(VGS=4.5V) -3.3A(VGS=-4.5 V) 27m(VGS=4.5V) 78m(VGS=-4.5V) RDSON(TYP.) 37m(VGS=2.5V) 115m(VGS=-2.5V)Description 82m(VGS=1.5V) 280m(VGS=-1.5V)The MTC3586BDFA6 cons