MTC6601N6 MOSFET. Datasheet pdf. Equivalent
Type Designator: MTC6601N6
Marking Code: 6601
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 1.14 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 3.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9.4 nC
trⓘ - Rise Time: 16.6 nS
Cossⓘ - Output Capacitance: 46 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: SOT26
MTC6601N6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTC6601N6 Datasheet (PDF)
..1. Size:507K cystek
mtc6601n6.pdf
mtc6601n6.pdf
Spec. No. : C813N6 Issued Date : 2017.03.30 CYStech Electronics Corp.Revised Date : Page No. : 1/12 N- AND P-Channel Enhancement Mode MOSFET N-CH P-CHMTC6601N6 BVDSS 30V -30VID 3.7A(VGS=10V) -2.7A(VGS=-10 V) 37.7m(VGS=10V) 91.3m(VGS=-10V) RDSON 42.7m(VGS=4.5V) 104m(VGS=-4.5V) (TYP.) 62.6m(VGS=2.5V) 132m(VGS=-2.5V) Features Simple drive requiremen
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