All MOSFET. MTC6601N6 Datasheet

 

MTC6601N6 Datasheet and Replacement


   Type Designator: MTC6601N6
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16.6 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SOT26
 

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MTC6601N6 Datasheet (PDF)

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MTC6601N6

Spec. No. : C813N6 Issued Date : 2017.03.30 CYStech Electronics Corp.Revised Date : Page No. : 1/12 N- AND P-Channel Enhancement Mode MOSFET N-CH P-CHMTC6601N6 BVDSS 30V -30VID 3.7A(VGS=10V) -2.7A(VGS=-10 V) 37.7m(VGS=10V) 91.3m(VGS=-10V) RDSON 42.7m(VGS=4.5V) 104m(VGS=-4.5V) (TYP.) 62.6m(VGS=2.5V) 132m(VGS=-2.5V) Features Simple drive requiremen

Datasheet: MTB1D0N03RH8 , MTB20N06KJ3 , MTB280N15L3 , MTB340N11N6 , MTC3586BDFA6 , MTC3587DL8 , MTC3588BDFA6 , MTC3588N6 , IRF830 , MTE030N15RQ8 , MTE050N15BRH8 , MTE050N15BRV8 , MTE65N20H8 , MTEF1P15AV8 , MTNK6N3 , MTP4435AQ8 , C2M065W030 .

History: SISA01DN | NTNS3A91PZ | WMR140NV6LG4 | STB46NF30 | NCEP058N85M | IPL60R185P7 | IRL540NLPBF

Keywords - MTC6601N6 MOSFET datasheet

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