All MOSFET. MTE030N15RQ8 Datasheet

 

MTE030N15RQ8 Datasheet and Replacement


   Type Designator: MTE030N15RQ8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19.2 nS
   Cossⓘ - Output Capacitance: 106 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: SOP-8
 

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MTE030N15RQ8 Datasheet (PDF)

 ..1. Size:717K  cystek
 mte030n15rq8.pdf pdf_icon

MTE030N15RQ8

Spec. No. : C838Q8 Issued Date : 2016.06.29 CYStech Electronics Corp. Revised Date : 2018.09.20 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTE030N15RQ8 BVDSS 150V ID @ TC=25C, VGS=10V 7.7A ID @ TA=25C, VGS=10V 5.6A Features RDS(ON)@VGS=10V, ID=6A 29.5 m(typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic

 9.1. Size:381K  jiejie micro
 jmte035n06d.pdf pdf_icon

MTE030N15RQ8

JMTE035N06DDescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 60V, 180A Load SwitchR

 9.2. Size:1253K  jiejie micro
 jmte035n04a.pdf pdf_icon

MTE030N15RQ8

40V, 150A, 3.2m N-channel Power Trench MOSFETJMTE035N04AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 2.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 150 A Pb-free platingRDS(ON)_Typ(@VGS=10V 3.2 mWApplications Load Switch PWM Application Power M

Datasheet: MTB20N06KJ3 , MTB280N15L3 , MTB340N11N6 , MTC3586BDFA6 , MTC3587DL8 , MTC3588BDFA6 , MTC3588N6 , MTC6601N6 , 8N60 , MTE050N15BRH8 , MTE050N15BRV8 , MTE65N20H8 , MTEF1P15AV8 , MTNK6N3 , MTP4435AQ8 , C2M065W030 , C2M065W060 .

History: FQB34N20L | C2T212 | SE8841A | 2SK4194LS | BUZ339 | AP2336GN-HF | BSP92P

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