MTE030N15RQ8 Specs and Replacement
Type Designator: MTE030N15RQ8
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19.2 nS
Cossⓘ - Output Capacitance: 106 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: SOP-8
MTE030N15RQ8 substitution
- MOSFET ⓘ Cross-Reference Search
MTE030N15RQ8 datasheet
mte030n15rq8.pdf
Spec. No. C838Q8 Issued Date 2016.06.29 CYStech Electronics Corp. Revised Date 2018.09.20 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET MTE030N15RQ8 BVDSS 150V ID @ TC=25 C, VGS=10V 7.7A ID @ TA=25 C, VGS=10V 5.6A Features RDS(ON)@VGS=10V, ID=6A 29.5 m (typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic ... See More ⇒
jmte035n06d.pdf
JMTE035N06D Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V, 180A Load Switch R ... See More ⇒
jmte035n04a.pdf
40V, 150A, 3.2m N-channel Power Trench MOSFET JMTE035N04A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 150 A Pb-free plating RDS(ON)_Typ(@VGS=10V 3.2 mW Applications Load Switch PWM Application Power M... See More ⇒
Detailed specifications: MTB20N06KJ3, MTB280N15L3, MTB340N11N6, MTC3586BDFA6, MTC3587DL8, MTC3588BDFA6, MTC3588N6, MTC6601N6, 8N60, MTE050N15BRH8, MTE050N15BRV8, MTE65N20H8, MTEF1P15AV8, MTNK6N3, MTP4435AQ8, C2M065W030, C2M065W060
Keywords - MTE030N15RQ8 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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