MTE030N15RQ8 MOSFET. Datasheet pdf. Equivalent
Type Designator: MTE030N15RQ8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 5.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 19.2 nS
Cossⓘ - Output Capacitance: 106 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: SOP-8
MTE030N15RQ8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTE030N15RQ8 Datasheet (PDF)
..1. Size:717K cystek
mte030n15rq8.pdf
mte030n15rq8.pdf
Spec. No. : C838Q8 Issued Date : 2016.06.29 CYStech Electronics Corp. Revised Date : 2018.09.20 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTE030N15RQ8 BVDSS 150V ID @ TC=25C, VGS=10V 7.7A ID @ TA=25C, VGS=10V 5.6A Features RDS(ON)@VGS=10V, ID=6A 29.5 m(typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
