All MOSFET. MTE030N15RQ8 Datasheet

 

MTE030N15RQ8 Datasheet and Replacement


   Type Designator: MTE030N15RQ8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19.2 nS
   Cossⓘ - Output Capacitance: 106 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: SOP-8
 

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MTE030N15RQ8 Datasheet (PDF)

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MTE030N15RQ8

Spec. No. : C838Q8 Issued Date : 2016.06.29 CYStech Electronics Corp. Revised Date : 2018.09.20 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTE030N15RQ8 BVDSS 150V ID @ TC=25C, VGS=10V 7.7A ID @ TA=25C, VGS=10V 5.6A Features RDS(ON)@VGS=10V, ID=6A 29.5 m(typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic

Datasheet: MTB20N06KJ3 , MTB280N15L3 , MTB340N11N6 , MTC3586BDFA6 , MTC3587DL8 , MTC3588BDFA6 , MTC3588N6 , MTC6601N6 , K2611 , MTE050N15BRH8 , MTE050N15BRV8 , MTE65N20H8 , MTEF1P15AV8 , MTNK6N3 , MTP4435AQ8 , C2M065W030 , C2M065W060 .

History: SWD088R08E8T | KF10N60P | IXCY01N90E | SM8007NSU | IXFP26N30X3 | UT7317 | IRFP344PBF

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