MTE030N15RQ8 PDF and Equivalents Search

 

MTE030N15RQ8 Specs and Replacement

Type Designator: MTE030N15RQ8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.2 nS

Cossⓘ - Output Capacitance: 106 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: SOP-8

MTE030N15RQ8 substitution

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MTE030N15RQ8 datasheet

 ..1. Size:717K  cystek
mte030n15rq8.pdf pdf_icon

MTE030N15RQ8

Spec. No. C838Q8 Issued Date 2016.06.29 CYStech Electronics Corp. Revised Date 2018.09.20 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET MTE030N15RQ8 BVDSS 150V ID @ TC=25 C, VGS=10V 7.7A ID @ TA=25 C, VGS=10V 5.6A Features RDS(ON)@VGS=10V, ID=6A 29.5 m (typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic ... See More ⇒

 9.1. Size:381K  jiejie micro
jmte035n06d.pdf pdf_icon

MTE030N15RQ8

JMTE035N06D Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V, 180A Load Switch R ... See More ⇒

 9.2. Size:1253K  jiejie micro
jmte035n04a.pdf pdf_icon

MTE030N15RQ8

40V, 150A, 3.2m N-channel Power Trench MOSFET JMTE035N04A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 150 A Pb-free plating RDS(ON)_Typ(@VGS=10V 3.2 mW Applications Load Switch PWM Application Power M... See More ⇒

Detailed specifications: MTB20N06KJ3, MTB280N15L3, MTB340N11N6, MTC3586BDFA6, MTC3587DL8, MTC3588BDFA6, MTC3588N6, MTC6601N6, 8N60, MTE050N15BRH8, MTE050N15BRV8, MTE65N20H8, MTEF1P15AV8, MTNK6N3, MTP4435AQ8, C2M065W030, C2M065W060

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