All MOSFET. MTE65N20H8 Datasheet

 

MTE65N20H8 Datasheet and Replacement


   Type Designator: MTE65N20H8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 60.4 nS
   Cossⓘ - Output Capacitance: 178 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: DFN5X6
 

 MTE65N20H8 substitution

   - MOSFET ⓘ Cross-Reference Search

 

MTE65N20H8 Datasheet (PDF)

 ..1. Size:587K  1
 mte65n20h8.pdf pdf_icon

MTE65N20H8

Spec. No. : C872H8 Issued Date : 2016.02.01 CYStech Electronics Corp. Revised Date : 2016.07.12 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 200VMTE65N20H8ID @VGS=10V, TC=25C 24A RDSON(TYP) VGS=10V, ID=11A 61m Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanche Rated Pb-fre

 ..2. Size:587K  cystek
 mte65n20h8.pdf pdf_icon

MTE65N20H8

Spec. No. : C872H8 Issued Date : 2016.02.01 CYStech Electronics Corp. Revised Date : 2016.07.12 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 200VMTE65N20H8ID @VGS=10V, TC=25C 24A RDSON(TYP) VGS=10V, ID=11A 61m Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanche Rated Pb-fre

 6.1. Size:304K  cystek
 mte65n20j3.pdf pdf_icon

MTE65N20H8

Spec. No. : C872J3 Issued Date : 2012.10.25 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200VMTE65N20J3 ID 25A61m VGS=10V, ID=11A RDSON(TYP) 66m VGS=6V, ID=5A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Circuit Ou

 6.2. Size:282K  cystek
 mte65n20f3.pdf pdf_icon

MTE65N20H8

Spec. No. : C872F3 Issued Date : 2012.12.26 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200VMTE65N20F3 ID 33A61m VGS=10V, ID=11A RDSON(TYP) 66m VGS=6V, ID=5A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline MTE65N20F3 TO-263

SHOW MORE

Datasheet: MTC3586BDFA6 , MTC3587DL8 , MTC3588BDFA6 , MTC3588N6 , MTC6601N6 , MTE030N15RQ8 , MTE050N15BRH8 , MTE050N15BRV8 , RU6888R , MTEF1P15AV8 , MTNK6N3 , MTP4435AQ8 , C2M065W030 , C2M065W060 , C2M065W200 , C2M090BG070 , C2M090W035 .

History: FDMS86263P

Keywords - MTE65N20H8 MOSFET datasheet

 MTE65N20H8 cross reference
 MTE65N20H8 equivalent finder
 MTE65N20H8 lookup
 MTE65N20H8 substitution
 MTE65N20H8 replacement

 

 
Back to Top

 


 
.