MTE65N20H8 MOSFET Datasheet: N-Ch, 200V, 24A. Full specification with pinout and replacement list

MTE65N20H8 Specs and Replacement

Type Designator: MTE65N20H8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60.4 nS

Cossⓘ - Output Capacitance: 178 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: DFN5X6

MTE65N20H8 substitution

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MTE65N20H8 datasheet

..1. Size:587K 1
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Spec. No. C872H8 Issued Date 2016.02.01 CYStech Electronics Corp. Revised Date 2016.07.12 Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 200V MTE65N20H8 ID @VGS=10V, TC=25 C 24A RDSON(TYP) VGS=10V, ID=11A 61m Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanche Rated Pb-fre... See More ⇒

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mte65n20j3.pdf pdf_icon

Spec. No. C872J3 Issued Date 2012.10.25 CYStech Electronics Corp. Revised Date 2013.12.30 Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200V MTE65N20J3 ID 25A 61m VGS=10V, ID=11A RDSON(TYP) 66m VGS=6V, ID=5A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Circuit Ou... See More ⇒

6.2. Size:282K cystek
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Spec. No. C872F3 Issued Date 2012.12.26 CYStech Electronics Corp. Revised Date Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200V MTE65N20F3 ID 33A 61m VGS=10V, ID=11A RDSON(TYP) 66m VGS=6V, ID=5A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline MTE65N20F3 TO-263 ... See More ⇒