All MOSFET. MTNK6N3 Datasheet

 

MTNK6N3 Datasheet and Replacement


   Type Designator: MTNK6N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.6 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: SOT23
 

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MTNK6N3 Datasheet (PDF)

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MTNK6N3

Spec. No. : C057N3 Issued Date : 2017.01.09 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode MOSFET BVDSS 60VMTNK6N3 ID@VGS=10V, TA=25C 0.35A RDS(ON)@VGS=10V, ID=500mA 0.9(typ) RDS(ON)@VGS=4.5V, ID=200mA 1.1(typ) Features ESD protected gate , 2kV (HBM) Easily designed drive circuits High speed switching Low-vo

Datasheet: MTC3588BDFA6 , MTC3588N6 , MTC6601N6 , MTE030N15RQ8 , MTE050N15BRH8 , MTE050N15BRV8 , MTE65N20H8 , MTEF1P15AV8 , IRFZ48N , MTP4435AQ8 , C2M065W030 , C2M065W060 , C2M065W200 , C2M090BG070 , C2M090W035 , C2M090W070 , C2M120W040 .

History: FQP9N50C

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