All MOSFET. MTNK6N3 Datasheet

 

MTNK6N3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTNK6N3
   Marking Code: 702
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 0.3 W
   Maximum Drain-Source Voltage |Vds|: 60 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
   Maximum Drain Current |Id|: 0.35 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 1.52 nC
   Rise Time (tr): 3.6 nS
   Drain-Source Capacitance (Cd): 12 pF
   Maximum Drain-Source On-State Resistance (Rds): 2 Ohm
   Package: SOT23

 MTNK6N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTNK6N3 Datasheet (PDF)

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 mtnk6n3.pdf

MTNK6N3 MTNK6N3

Spec. No. : C057N3 Issued Date : 2017.01.09 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode MOSFET BVDSS 60VMTNK6N3 ID@VGS=10V, TA=25C 0.35A RDS(ON)@VGS=10V, ID=500mA 0.9(typ) RDS(ON)@VGS=4.5V, ID=200mA 1.1(typ) Features ESD protected gate , 2kV (HBM) Easily designed drive circuits High speed switching Low-vo

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