MTNK6N3 MOSFET. Datasheet pdf. Equivalent
Type Designator: MTNK6N3
Marking Code: 702
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 0.35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.52 nC
trⓘ - Rise Time: 3.6 nS
Cossⓘ - Output Capacitance: 12 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: SOT23
MTNK6N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTNK6N3 Datasheet (PDF)
..1. Size:479K cystek
mtnk6n3.pdf
mtnk6n3.pdf
Spec. No. : C057N3 Issued Date : 2017.01.09 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode MOSFET BVDSS 60VMTNK6N3 ID@VGS=10V, TA=25C 0.35A RDS(ON)@VGS=10V, ID=500mA 0.9(typ) RDS(ON)@VGS=4.5V, ID=200mA 1.1(typ) Features ESD protected gate , 2kV (HBM) Easily designed drive circuits High speed switching Low-vo
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