C2M090BG070 MOSFET Datasheet: N-Ch, 900V, 40A. Full specification with pinout and replacement list

C2M090BG070 Specs and Replacement

Type Designator: C2M090BG070

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 338 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 99 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.084 Ohm

Package: TO-263

C2M090BG070 substitution

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C2M090BG070 datasheet

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nvert C2M090BG070 Suzhou Convert Semiconductor Co ., Ltd. 900V N-Channel Silicon Carbide Power MOSFET FEATURES Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen Free, RoHS Compliant BENEFITS Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency Operation APPLICATIONS Switch Mode Power Supp... See More ⇒

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nvert C2M090W070 Suzhou Convert Semiconductor Co ., Ltd. 900V N-Channel Silicon Carbide Power MOSFET FEATURES Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen Free, RoHS Compliant BENEFITS Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency Operation APPLICATIONS Switch Mode Power Suppl... See More ⇒

8.2. Size:2040K convert
c2m090w035.pdf pdf_icon

nvert Suzhou Convert Semiconductor Co ., Ltd. C2M090W035 900V N-Channel Silicon Carbide Power MOSFET FEATURES Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen Free, RoHS Compliant BENEFITS Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency Operation APPLICATIONS Switch Mode Power Suppl... See More ⇒

Detailed specifications: MTE050N15BRV8, MTE65N20H8, MTEF1P15AV8, MTNK6N3, MTP4435AQ8, C2M065W030, C2M065W060, C2M065W200, IRF830, C2M090W035, C2M090W070, C2M120W040, C2M120W080, C2M120W280, CS10N60P, CS1060K, CS10N65F