C2M090BG070 MOSFET. Datasheet pdf. Equivalent
Type Designator: C2M090BG070
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 338 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 90.8 nC
Rise Time (tr): 45 nS
Drain-Source Capacitance (Cd): 99 pF
Maximum Drain-Source On-State Resistance (Rds): 0.084 Ohm
Package: TO-263
C2M090BG070 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
C2M090BG070 Datasheet (PDF)
c2m090bg070.pdf
nvertC2M090BG070Suzhou Convert Semiconductor Co ., Ltd.900V N-Channel Silicon Carbide Power MOSFETFEATURES Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen Free, RoHS CompliantBENEFITS Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency OperationAPPLICATIONS Switch Mode Power Supp
c2m090w070.pdf
nvertC2M090W070Suzhou Convert Semiconductor Co ., Ltd.900V N-Channel Silicon Carbide Power MOSFETFEATURES Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen Free, RoHS CompliantBENEFITS Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency OperationAPPLICATIONS Switch Mode Power Suppl
c2m090w035.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.C2M090W035900V N-Channel Silicon Carbide Power MOSFETFEATURES Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen Free, RoHS CompliantBENEFITS Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency OperationAPPLICATIONS Switch Mode Power Suppl
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
