All MOSFET. CS14N80V Datasheet

 

CS14N80V MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS14N80V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 105 nC
   trⓘ - Rise Time: 51.5 nS
   Cossⓘ - Output Capacitance: 264 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.72 Ohm
   Package: TO-3P

 CS14N80V Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS14N80V Datasheet (PDF)

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 cs14n80v.pdf

CS14N80V CS14N80V

nvertSuzhou Convert Semiconductor Co ., Ltd.CS14N80V800V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS14N80V TO-3P CS14N80VAbsolute Maxi

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: RFD16N05L | SWF6N65K

 

 
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