All MOSFET. CS15N50P Datasheet

 

CS15N50P MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS15N50P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 44 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
   Package: TO-220

 CS15N50P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS15N50P Datasheet (PDF)

 ..1. Size:403K  convert
cs15n50f cs15n50p.pdf

CS15N50P
CS15N50P

nvertSuzhou Convert Semiconductor Co ., Ltd.CS15N50F,CS15N50P500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS15N50F TO-220F CS15N50FCS

 7.1. Size:229K  crhj
cs15n50 a8r.pdf

CS15N50P
CS15N50P

Silicon N-Channel Power MOSFET R CS15N50 A8R General Description VDSS 500 V CS15N50 A8R, the silicon N-channel Enhanced ID 15 A PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.2. Size:231K  crhj
cs15n50f a9r.pdf

CS15N50P
CS15N50P

Silicon N-Channel Power MOSFET R CS15N50F A9R General Description VDSS 500 V CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, ID 15 A PD(TC=25) 70 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.3 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.3. Size:231K  wuxi china
cs15n50fa9r.pdf

CS15N50P
CS15N50P

Silicon N-Channel Power MOSFET R CS15N50F A9R General Description VDSS 500 V CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, ID 15 A PD(TC=25) 70 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.3 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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