All MOSFET. CS15N50P Datasheet

 

CS15N50P Datasheet and Replacement


   Type Designator: CS15N50P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
   Package: TO-220
 

 CS15N50P substitution

   - MOSFET ⓘ Cross-Reference Search

 

CS15N50P Datasheet (PDF)

 ..1. Size:403K  convert
 cs15n50f cs15n50p.pdf pdf_icon

CS15N50P

nvertSuzhou Convert Semiconductor Co ., Ltd.CS15N50F,CS15N50P500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS15N50F TO-220F CS15N50FCS

 7.1. Size:229K  crhj
 cs15n50 a8r.pdf pdf_icon

CS15N50P

Silicon N-Channel Power MOSFET R CS15N50 A8R General Description VDSS 500 V CS15N50 A8R, the silicon N-channel Enhanced ID 15 A PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.2. Size:231K  crhj
 cs15n50f a9r.pdf pdf_icon

CS15N50P

Silicon N-Channel Power MOSFET R CS15N50F A9R General Description VDSS 500 V CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, ID 15 A PD(TC=25) 70 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.3 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.3. Size:231K  wuxi china
 cs15n50fa9r.pdf pdf_icon

CS15N50P

Silicon N-Channel Power MOSFET R CS15N50F A9R General Description VDSS 500 V CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, ID 15 A PD(TC=25) 70 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.3 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

SHOW MORE

Datasheet: CS12N80F , CS12N80V , CS13N60P , CS13N60F , CS13N65P , CS13N65F , CS14N80V , CS15N50F , 7N65 , CS15N70F , CS16N60F , CS16N60P , CS16N65F , CS16N65P , CS16N65W , CS18N20BF , CS18N20BP .

History: 2SK2675

Keywords - CS15N50P MOSFET datasheet

 CS15N50P cross reference
 CS15N50P equivalent finder
 CS15N50P lookup
 CS15N50P substitution
 CS15N50P replacement

 

 
Back to Top

 


 
.