CS30N10U Datasheet. Specs and Replacement

Type Designator: CS30N10U  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 276 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: TO-251

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CS30N10U substitution

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CS30N10U datasheet

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cs30n10p cs30n10u cs30n10d.pdf pdf_icon

CS30N10U

nvert Suzhou Convert Semiconductor Co ., Ltd. CS30N10P,CS30N10U CS30N10D 100V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS30N10P TO-220 CS... See More ⇒

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CS30N10U

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CS30N10U

Silicon N-Channel Power MOSFET R CS30N20F A9R General Description VDSS 200 V CS30N20F A9R, the silicon N-channel Enhanced ID 30 A PD(TC=25 ) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 70 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

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CS30N10U

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Detailed specifications: CS2N70HF, CS2N70HP, CS2N70HU, CS2N70HD, CS2N90F, CS2N90P, CS2N90B, CS30N10P, STP65NF06, CS30N10D, CS3N100F, CS3N100P, CS3N150F, CS3N150W, CS3N150VF, CS3N50DF, CS3N50DP

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