SSH15N60 PDF and Equivalents Search

 

SSH15N60 Specs and Replacement

Type Designator: SSH15N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 280 nS

Cossⓘ - Output Capacitance: 738 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO3P

SSH15N60 substitution

- MOSFET ⓘ Cross-Reference Search

 

SSH15N60 datasheet

 ..1. Size:394K  samsung
ssh15n60 ssh15n55.pdf pdf_icon

SSH15N60

SSH15N55 PCB 24 ... See More ⇒

Detailed specifications: SSF9N90A , SSH10N60A , SSH10N70 , SSH10N70A , SSH10N80A , SSH10N90A , SSH15N55 , SSH15N55A , IRF1404 , SSH15N60A , SSH17N60A , SSH20N45 , SSH20N45A , SSH20N50 , SSH20N50A , SSH22N50A , SSH25N35 .

History: FDU6N25

Keywords - SSH15N60 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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