All MOSFET. CS4N90F Datasheet

 

CS4N90F MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS4N90F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 27 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 71 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: TO-220F

 CS4N90F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS4N90F Datasheet (PDF)

 ..1. Size:659K  convert
 cs4n90f cs4n90p.pdf

CS4N90F CS4N90F

nvertSuzhou Convert Semiconductor Co ., Ltd.CS4N90F, CS4N90P900V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS4N90F TO-220F CS4N90FCS4N9

 0.1. Size:1165K  jilin sino
 jcs4n90va jcs4n90ra jcs4n90sa jcs4n90fa jcs4n90ca.pdf

CS4N90F CS4N90F

N RN-CHANNEL MOSFET JCS4N90A MAIN CHARACTERISTICS Package ID 4.0 A VDSS 900 V RdsonVgs=10V 3.3 -MAX Qg-Typ 14.7nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge LED power suppli

 0.2. Size:1046K  jilin sino
 jcs4n90fh jcs4n90rh jcs4n90vh.pdf

CS4N90F CS4N90F

N RN-CHANNEL MOSFET CSJ 4N90H Package MAIN CHARACTERISTICS ID 4 4 4A VDSS 900 V Rdson_max 5.5 Vgs=10V Qg-typ 7 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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