All MOSFET. SSH25N35 Datasheet

 

SSH25N35 Datasheet and Replacement


   Type Designator: SSH25N35
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 280 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO3P
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SSH25N35 Datasheet (PDF)

 ..1. Size:275K  samsung
 ssh25n35 ssh25n40.pdf pdf_icon

SSH25N35

 8.1. Size:214K  samsung
 ssh25n40a.pdf pdf_icon

SSH25N35

SSH25N40AAdvanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 25 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.162 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WMM11N80M3 | AM2314NE | FDMS9620S | IRFI7536G | RFP2N10L

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