CS9N80F Specs and Replacement

Type Designator: CS9N80F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 162 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-220F

CS9N80F substitution

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CS9N80F datasheet

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 cs9n80f cs9n80p.pdf pdf_icon

CS9N80F

nvert Suzhou Convert Semiconductor Co ., Ltd. CS9N80F, CS9N80P 800V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS9N80F TO-220F CS9N80F CS9N8... See More ⇒

Detailed specifications: CS8N65F, CS8N65P, CS8N65D, CS8N70F, CS8N90F, CS8N90P, CS9N65F, CS9N65D, AO4468, CS9N80P, CS9N90F, CS9N90P, CS9N90W, CS9N90V, CS9N95F, CS9N95W, CSB08N6P5

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