SSH25N35A PDF and Equivalents Search

 

SSH25N35A Specs and Replacement

Type Designator: SSH25N35A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO3P

SSH25N35A substitution

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SSH25N35A datasheet

 6.1. Size:275K  samsung
 ssh25n35 ssh25n40.pdf pdf_icon

SSH25N35A

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 8.1. Size:214K  samsung
 ssh25n40a.pdf pdf_icon

SSH25N35A

SSH25N40A Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 25 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 10 A (Max.) @ VDS = 400V Low RDS(ON) 0.162 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol C... See More ⇒

Detailed specifications: SSH15N60A , SSH17N60A , SSH20N45 , SSH20N45A , SSH20N50 , SSH20N50A , SSH22N50A , SSH25N35 , AON6414A , SSH25N40 , SSH25N40A , SSH3N70 , SSH3N70A , SSH40N15 , SSH40N15A , SSH40N20 , SSH40N20A .

History: SSH10N90A

Keywords - SSH25N35A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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