CSB08N6P5 Specs and Replacement

Type Designator: CSB08N6P5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.2 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO-263

CSB08N6P5 substitution

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CSB08N6P5 datasheet

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CSB08N6P5

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Detailed specifications: CS9N80F, CS9N80P, CS9N90F, CS9N90P, CS9N90W, CS9N90V, CS9N95F, CS9N95W, IRF540, CSD03N6P3, CSD08N6P5, CSFR12N60F, CSFR20N60F, CSFR2N60F, CSFR2N60P, CSFR2N60U, CSFR2N60D

Keywords - CSB08N6P5 MOSFET specs

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