All MOSFET. CSB08N6P5 Datasheet

 

CSB08N6P5 Datasheet and Replacement


   Type Designator: CSB08N6P5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.2 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-263
 

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CSB08N6P5 Datasheet (PDF)

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CSB08N6P5

CSB08N6P580V N-Channel Split Gate MOSFETFEATURESl Trench Power MOSFET Technologyl Low RDS(ON)l Low Gate Chargel Optimized For Fast-switching ApplicationsAPPLICATIONSl DC/DC Converterl Ideal for high-frequency switching and synchronous rectificationDevice Marking and Package InformationDevice Package MarkingCSB08N6P5 TO-263 CSB08N6P5Absolute Maximum Ratings at Tj= 25

Datasheet: CS9N80F , CS9N80P , CS9N90F , CS9N90P , CS9N90W , CS9N90V , CS9N95F , CS9N95W , IRF540N , CSD03N6P3 , CSD08N6P5 , CSFR12N60F , CSFR20N60F , CSFR2N60F , CSFR2N60P , CSFR2N60U , CSFR2N60D .

History: STF15N65M5 | AP8205A | SI7658ADP | UTT6NP10G-S08-R | SIA537EDJ | HY4903B6 | QM2N7002E3K1

Keywords - CSB08N6P5 MOSFET datasheet

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