All MOSFET. CSD03N6P3 Datasheet

 

CSD03N6P3 Datasheet and Replacement


   Type Designator: CSD03N6P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 498 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: TO-252
 

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CSD03N6P3 Datasheet (PDF)

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CSD03N6P3

CSD03N6P330V N-Channel Split Gate MOSFETFEATURESl Super Low Gate Chargel 100% EAS Guaranteedl RoHS compliantl Green Device Availablel Excellent CdV/dt effect declinel Advanced high cell density Trench technologyAPPLICATIONSlDC/DC Converterl Ideal for high-frequency switching and synchronous rectificationDevice Marking and Package InformationDevice Package MarkingCS

Datasheet: CS9N80P , CS9N90F , CS9N90P , CS9N90W , CS9N90V , CS9N95F , CS9N95W , CSB08N6P5 , 50N06 , CSD08N6P5 , CSFR12N60F , CSFR20N60F , CSFR2N60F , CSFR2N60P , CSFR2N60U , CSFR2N60D , CSFR3N60F .

History: AO4862 | BLP04N10-B | RQA0008NXAQS | AM2394NE | HGN036N08S | S-LNTK2575LT1G | SWB046R68E8T

Keywords - CSD03N6P3 MOSFET datasheet

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