All MOSFET. CSD03N6P3 Datasheet

 

CSD03N6P3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CSD03N6P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 8 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 498 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: TO-252

 CSD03N6P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CSD03N6P3 Datasheet (PDF)

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 csd03n6p3.pdf

CSD03N6P3 CSD03N6P3

CSD03N6P330V N-Channel Split Gate MOSFETFEATURESl Super Low Gate Chargel 100% EAS Guaranteedl RoHS compliantl Green Device Availablel Excellent CdV/dt effect declinel Advanced high cell density Trench technologyAPPLICATIONSlDC/DC Converterl Ideal for high-frequency switching and synchronous rectificationDevice Marking and Package InformationDevice Package MarkingCS

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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