CSD03N6P3 Datasheet and Replacement
Type Designator: CSD03N6P3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 498 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
Package: TO-252
CSD03N6P3 substitution
CSD03N6P3 Datasheet (PDF)
csd03n6p3.pdf

CSD03N6P330V N-Channel Split Gate MOSFETFEATURESl Super Low Gate Chargel 100% EAS Guaranteedl RoHS compliantl Green Device Availablel Excellent CdV/dt effect declinel Advanced high cell density Trench technologyAPPLICATIONSlDC/DC Converterl Ideal for high-frequency switching and synchronous rectificationDevice Marking and Package InformationDevice Package MarkingCS
Datasheet: CS9N80P , CS9N90F , CS9N90P , CS9N90W , CS9N90V , CS9N95F , CS9N95W , CSB08N6P5 , 50N06 , CSD08N6P5 , CSFR12N60F , CSFR20N60F , CSFR2N60F , CSFR2N60P , CSFR2N60U , CSFR2N60D , CSFR3N60F .
History: BSO130N03MSG | HAT2057RA | AON7754 | DH033N03E | 2SK416S | TPB65R940C
Keywords - CSD03N6P3 MOSFET datasheet
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History: BSO130N03MSG | HAT2057RA | AON7754 | DH033N03E | 2SK416S | TPB65R940C



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