CSD03N6P3 Specs and Replacement
Type Designator: CSD03N6P3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 498 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
Package: TO-252
CSD03N6P3 substitution
- MOSFET ⓘ Cross-Reference Search
CSD03N6P3 datasheet
csd03n6p3.pdf
CSD03N6P3 30V N-Channel Split Gate MOSFET FEATURES l Super Low Gate Charge l 100% EAS Guaranteed l RoHS compliant l Green Device Available l Excellent CdV/dt effect decline l Advanced high cell density Trench technology APPLICATIONS lDC/DC Converter l Ideal for high-frequency switching and synchronous rectification Device Marking and Package Information Device Package Marking CS... See More ⇒
Detailed specifications: CS9N80P, CS9N90F, CS9N90P, CS9N90W, CS9N90V, CS9N95F, CS9N95W, CSB08N6P5, 50N06, CSD08N6P5, CSFR12N60F, CSFR20N60F, CSFR2N60F, CSFR2N60P, CSFR2N60U, CSFR2N60D, CSFR3N60F
Keywords - CSD03N6P3 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: MTP2603N6
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