All MOSFET. CSD08N6P5 Datasheet

 

CSD08N6P5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CSD08N6P5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 98 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 4.2 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-252

 CSD08N6P5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CSD08N6P5 Datasheet (PDF)

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 csd08n6p5.pdf

CSD08N6P5 CSD08N6P5

CSD08N6P580V N-Channel Split Gate MOSFETFEATURESl Super Low Gate Chargel 100% EAS Guaranteedl RoHS compliantl Green Device Availablel Excellent CdV/dt effect declinel Advanced high cell density Trench technologyAPPLICATIONSlDC/DC Converterl Ideal for high-frequency switching and synchronous rectificationDevice Marking and Package InformationDevice Package MarkingCS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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