All MOSFET. CSD08N6P5 Datasheet

 

CSD08N6P5 Datasheet and Replacement


   Type Designator: CSD08N6P5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 98 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4.2 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-252
 

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CSD08N6P5 Datasheet (PDF)

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CSD08N6P5

CSD08N6P580V N-Channel Split Gate MOSFETFEATURESl Super Low Gate Chargel 100% EAS Guaranteedl RoHS compliantl Green Device Availablel Excellent CdV/dt effect declinel Advanced high cell density Trench technologyAPPLICATIONSlDC/DC Converterl Ideal for high-frequency switching and synchronous rectificationDevice Marking and Package InformationDevice Package MarkingCS

Datasheet: CS9N90F , CS9N90P , CS9N90W , CS9N90V , CS9N95F , CS9N95W , CSB08N6P5 , CSD03N6P3 , IRFP460 , CSFR12N60F , CSFR20N60F , CSFR2N60F , CSFR2N60P , CSFR2N60U , CSFR2N60D , CSFR3N60F , CSFR3N60P .

History: IXTH21N50

Keywords - CSD08N6P5 MOSFET datasheet

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