CSD08N6P5 Specs and Replacement

Type Designator: CSD08N6P5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 98 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.2 nS

Cossⓘ - Output Capacitance: 410 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO-252

CSD08N6P5 substitution

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CSD08N6P5 datasheet

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CSD08N6P5

CSD08N6P5 80V N-Channel Split Gate MOSFET FEATURES l Super Low Gate Charge l 100% EAS Guaranteed l RoHS compliant l Green Device Available l Excellent CdV/dt effect decline l Advanced high cell density Trench technology APPLICATIONS lDC/DC Converter l Ideal for high-frequency switching and synchronous rectification Device Marking and Package Information Device Package Marking CS... See More ⇒

Detailed specifications: CS9N90F, CS9N90P, CS9N90W, CS9N90V, CS9N95F, CS9N95W, CSB08N6P5, CSD03N6P3, IRFP460, CSFR12N60F, CSFR20N60F, CSFR2N60F, CSFR2N60P, CSFR2N60U, CSFR2N60D, CSFR3N60F, CSFR3N60P

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.