SSH25N40A Datasheet and Replacement
Type Designator: SSH25N40A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 435 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO3P
SSH25N40A substitution
SSH25N40A Datasheet (PDF)
ssh25n40a.pdf
SSH25N40AAdvanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 25 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.162 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C
Datasheet: SSH20N45 , SSH20N45A , SSH20N50 , SSH20N50A , SSH22N50A , SSH25N35 , SSH25N35A , SSH25N40 , IRF9540 , SSH3N70 , SSH3N70A , SSH40N15 , SSH40N15A , SSH40N20 , SSH40N20A , SSH45N20A , SSH4N70 .
History: IRF8721G
Keywords - SSH25N40A MOSFET datasheet
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History: IRF8721G
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