All MOSFET. CSFR4N60F Datasheet

 

CSFR4N60F Datasheet and Replacement


   Type Designator: CSFR4N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO-220F
 

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CSFR4N60F Datasheet (PDF)

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CSFR4N60F

CSFR4N60F,CSFR4N60PnvertSuzhou Convert Semiconductor Co ., Ltd.CSFR4N60U,CSFR4N60D600V N-Channel MOSFETFEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Ma

Datasheet: CSFR3N60F , CSFR3N60P , CSFR3N60U , CSFR3N60D , CSFR3N60LF , CSFR3N60LP , CSFR3N60LU , CSFR3N60LD , 2SK3878 , CSFR4N60P , CSFR4N60U , CSFR4N60D , CSFR6N60F , CSFR6N60K , CSFR6N60U , CSFR6N60D , CSFR6N70F .

History: IRF2804S-7P

Keywords - CSFR4N60F MOSFET datasheet

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