All MOSFET. CSFR4N60F Datasheet

 

CSFR4N60F MOSFET. Datasheet pdf. Equivalent


   Type Designator: CSFR4N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO-220F

 CSFR4N60F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CSFR4N60F Datasheet (PDF)

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 csfr4n60f csfr4n60p csfr4n60u csfr4n60d.pdf

CSFR4N60F CSFR4N60F

CSFR4N60F,CSFR4N60PnvertSuzhou Convert Semiconductor Co ., Ltd.CSFR4N60U,CSFR4N60D600V N-Channel MOSFETFEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Ma

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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