CSN03N3P9 MOSFET. Datasheet pdf. Equivalent
Type Designator: CSN03N3P9
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 23 nC
trⓘ - Rise Time: 4.5 nS
Cossⓘ - Output Capacitance: 610 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
Package: DFN5X6
CSN03N3P9 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CSN03N3P9 Datasheet (PDF)
csn03n3p9.pdf
nvertCSN03N3P9Suzhou Convert Semiconductor Co ., Ltd.30V N-Channel Split Gate Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS DC/DC ConverterIdeal for high-frequency switching and synchronousrectificati
csn03n3p9.pdf
nvertCSN03N3P9Suzhou Convert Semiconductor Co ., Ltd.30V N-Channel Split Gate Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS DC/DC ConverterIdeal for high-frequency switching and synchronousrectificati
csn03n2p2.pdf
CSN03N2P230V N-Channel Split Gate MOSFETFEATURESl Super Low Gate Chargel 100% EAS Guaranteedl RoHS compliantl Green Device Availablel Excellent CdV/dt effect declinel Advanced high cell density Trench technologyAPPLICATIONSlDC/DC Converterl Ideal for high-frequency switching a n d synchronous rectificationDevice Marking and Package InformationDevice Package Marking
csn03n2p2.pdf
CSN03N2P230V N-Channel Split Gate MOSFETFEATURESl Super Low Gate Chargel 100% EAS Guaranteedl RoHS compliantl Green Device Availablel Excellent CdV/dt effect declinel Advanced high cell density Trench technologyAPPLICATIONSlDC/DC Converterl Ideal for high-frequency switching a n d synchronous rectificationDevice Marking and Package InformationDevice Package Marking
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SI7153DN | H06N60U
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918