CSN03N3P9 Specs and Replacement

Type Designator: CSN03N3P9

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.5 nS

Cossⓘ - Output Capacitance: 610 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm

Package: DFN5X6

CSN03N3P9 substitution

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CSN03N3P9 datasheet

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CSN03N3P9

nvert CSN03N3P9 Suzhou Convert Semiconductor Co ., Ltd. 30V N-Channel Split Gate Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS DC/DC Converter Ideal for high-frequency switching and synchronous rectificati... See More ⇒

 ..2. Size:699K  convert
 csn03n3p9.pdf pdf_icon

CSN03N3P9

nvert CSN03N3P9 Suzhou Convert Semiconductor Co ., Ltd. 30V N-Channel Split Gate Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS DC/DC Converter Ideal for high-frequency switching and synchronous rectificati... See More ⇒

 8.1. Size:932K  1
 csn03n2p2.pdf pdf_icon

CSN03N3P9

CSN03N2P2 30V N-Channel Split Gate MOSFET FEATURES l Super Low Gate Charge l 100% EAS Guaranteed l RoHS compliant l Green Device Available l Excellent CdV/dt effect decline l Advanced high cell density Trench technology APPLICATIONS lDC/DC Converter l Ideal for high-frequency switching a n d synchronous rectification Device Marking and Package Information Device Package Marking ... See More ⇒

 8.2. Size:932K  convert
 csn03n2p2.pdf pdf_icon

CSN03N3P9

CSN03N2P2 30V N-Channel Split Gate MOSFET FEATURES l Super Low Gate Charge l 100% EAS Guaranteed l RoHS compliant l Green Device Available l Excellent CdV/dt effect decline l Advanced high cell density Trench technology APPLICATIONS lDC/DC Converter l Ideal for high-frequency switching a n d synchronous rectification Device Marking and Package Information Device Package Marking ... See More ⇒

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Detailed specifications: CSFR6N70K, CSFR6N70U, CSFR6N70D, CSFR7N60F, CSFR7N60K, CSFR7N60D, CSFR7N60U, CSN03N2P2, SPP20N60C3, CSN04N1P5, CSN06N3P6, CSNC04N8P5, CSP08N6P5, CSP10N4P2, CSP10N8P3, CST08N50U, CST08N50D

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.