CSN03N3P9. Аналоги и основные параметры

Наименование производителя: CSN03N3P9

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 48 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 4.5 ns

Cossⓘ - Выходная емкость: 610 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0039 Ohm

Тип корпуса: DFN5X6

Аналог (замена) для CSN03N3P9

- подборⓘ MOSFET транзистора по параметрам

 

CSN03N3P9 даташит

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CSN03N3P9

nvert CSN03N3P9 Suzhou Convert Semiconductor Co ., Ltd. 30V N-Channel Split Gate Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS DC/DC Converter Ideal for high-frequency switching and synchronous rectificati

 ..2. Size:699K  convert
 csn03n3p9.pdf pdf_icon

CSN03N3P9

nvert CSN03N3P9 Suzhou Convert Semiconductor Co ., Ltd. 30V N-Channel Split Gate Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS DC/DC Converter Ideal for high-frequency switching and synchronous rectificati

 8.1. Size:932K  1
 csn03n2p2.pdf pdf_icon

CSN03N3P9

CSN03N2P2 30V N-Channel Split Gate MOSFET FEATURES l Super Low Gate Charge l 100% EAS Guaranteed l RoHS compliant l Green Device Available l Excellent CdV/dt effect decline l Advanced high cell density Trench technology APPLICATIONS lDC/DC Converter l Ideal for high-frequency switching a n d synchronous rectification Device Marking and Package Information Device Package Marking

 8.2. Size:932K  convert
 csn03n2p2.pdf pdf_icon

CSN03N3P9

CSN03N2P2 30V N-Channel Split Gate MOSFET FEATURES l Super Low Gate Charge l 100% EAS Guaranteed l RoHS compliant l Green Device Available l Excellent CdV/dt effect decline l Advanced high cell density Trench technology APPLICATIONS lDC/DC Converter l Ideal for high-frequency switching a n d synchronous rectification Device Marking and Package Information Device Package Marking

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... CSFR6N70K, CSFR6N70U, CSFR6N70D, CSFR7N60F, CSFR7N60K, CSFR7N60D, CSFR7N60U, CSN03N2P2, SPP20N60C3, CSN04N1P5, CSN06N3P6, CSNC04N8P5, CSP08N6P5, CSP10N4P2, CSP10N8P3, CST08N50U, CST08N50D