CSN03N3P9 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CSN03N3P9
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 48 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 4.5 ns
Cossⓘ - Выходная емкость: 610 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0039 Ohm
Тип корпуса: DFN5X6
Аналог (замена) для CSN03N3P9
CSN03N3P9 Datasheet (PDF)
csn03n3p9.pdf
nvertCSN03N3P9Suzhou Convert Semiconductor Co ., Ltd.30V N-Channel Split Gate Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS DC/DC ConverterIdeal for high-frequency switching and synchronousrectificati
csn03n3p9.pdf
nvertCSN03N3P9Suzhou Convert Semiconductor Co ., Ltd.30V N-Channel Split Gate Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS DC/DC ConverterIdeal for high-frequency switching and synchronousrectificati
csn03n2p2.pdf
CSN03N2P230V N-Channel Split Gate MOSFETFEATURESl Super Low Gate Chargel 100% EAS Guaranteedl RoHS compliantl Green Device Availablel Excellent CdV/dt effect declinel Advanced high cell density Trench technologyAPPLICATIONSlDC/DC Converterl Ideal for high-frequency switching a n d synchronous rectificationDevice Marking and Package InformationDevice Package Marking
csn03n2p2.pdf
CSN03N2P230V N-Channel Split Gate MOSFETFEATURESl Super Low Gate Chargel 100% EAS Guaranteedl RoHS compliantl Green Device Availablel Excellent CdV/dt effect declinel Advanced high cell density Trench technologyAPPLICATIONSlDC/DC Converterl Ideal for high-frequency switching a n d synchronous rectificationDevice Marking and Package InformationDevice Package Marking
Другие MOSFET... CSFR6N70K , CSFR6N70U , CSFR6N70D , CSFR7N60F , CSFR7N60K , CSFR7N60D , CSFR7N60U , CSN03N2P2 , AON7410 , CSN04N1P5 , CSN06N3P6 , CSNC04N8P5 , CSP08N6P5 , CSP10N4P2 , CSP10N8P3 , CST08N50U , CST08N50D .
History: 2SK2162 | VBA1310S | AO3415A | BUK9M53-60E | APT8M100S | AS2305
History: 2SK2162 | VBA1310S | AO3415A | BUK9M53-60E | APT8M100S | AS2305
Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
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