CSN06N3P6 Datasheet and Replacement
Type Designator: CSN06N3P6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 1522 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: DFN5X6
CSN06N3P6 substitution
CSN06N3P6 Datasheet (PDF)
csn06n3p6.pdf
CSN06N3P660V N-Channel Split Gate MOSFETFEATURESl Trench Power MOSFET Technologyl Low RDS(ON)l Low Gate Chargel Optimized For Fast-switching ApplicationsAPPLICATIONSlDC/DC Converterl Ideal for high-frequency switching and synchronous rectificationDevice Marking and Package InformationDevice Package MarkingCSN06N3P6 DFN5*6 CSN06N3P6Absolute Maximum Ratings at Tj= 25
csn06n3p6.pdf
CSN06N3P660V N-Channel Split Gate MOSFETFEATURESl Trench Power MOSFET Technologyl Low RDS(ON)l Low Gate Chargel Optimized For Fast-switching ApplicationsAPPLICATIONSlDC/DC Converterl Ideal for high-frequency switching and synchronous rectificationDevice Marking and Package InformationDevice Package MarkingCSN06N3P6 DFN5*6 CSN06N3P6Absolute Maximum Ratings at Tj= 25
Datasheet: CSFR6N70D , CSFR7N60F , CSFR7N60K , CSFR7N60D , CSFR7N60U , CSN03N2P2 , CSN03N3P9 , CSN04N1P5 , IRFB3607 , CSNC04N8P5 , CSP08N6P5 , CSP10N4P2 , CSP10N8P3 , CST08N50U , CST08N50D , CST08N50F , CST1N50DLU .
History: AP60WN1K5I | 24NM60L-TF1-T
Keywords - CSN06N3P6 MOSFET datasheet
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History: AP60WN1K5I | 24NM60L-TF1-T
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