CSN06N3P6 Specs and Replacement
Type Designator: CSN06N3P6
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 1522 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: DFN5X6
CSN06N3P6 substitution
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CSN06N3P6 datasheet
csn06n3p6.pdf
CSN06N3P6 60V N-Channel Split Gate MOSFET FEATURES l Trench Power MOSFET Technology l Low RDS(ON) l Low Gate Charge l Optimized For Fast-switching Applications APPLICATIONS lDC/DC Converter l Ideal for high-frequency switching and synchronous rectification Device Marking and Package Information Device Package Marking CSN06N3P6 DFN5*6 CSN06N3P6 Absolute Maximum Ratings at Tj= 25 ... See More ⇒
csn06n3p6.pdf
CSN06N3P6 60V N-Channel Split Gate MOSFET FEATURES l Trench Power MOSFET Technology l Low RDS(ON) l Low Gate Charge l Optimized For Fast-switching Applications APPLICATIONS lDC/DC Converter l Ideal for high-frequency switching and synchronous rectification Device Marking and Package Information Device Package Marking CSN06N3P6 DFN5*6 CSN06N3P6 Absolute Maximum Ratings at Tj= 25 ... See More ⇒
Detailed specifications: CSFR6N70D, CSFR7N60F, CSFR7N60K, CSFR7N60D, CSFR7N60U, CSN03N2P2, CSN03N3P9, CSN04N1P5, K4145, CSNC04N8P5, CSP08N6P5, CSP10N4P2, CSP10N8P3, CST08N50U, CST08N50D, CST08N50F, CST1N50DLU
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