CSP08N6P5 PDF and Equivalents Search

 

CSP08N6P5 Specs and Replacement


   Type Designator: CSP08N6P5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 4.2 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-220
 

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CSP08N6P5 datasheet

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CSP08N6P5

CSP08N6P5 80V N-Channel Split Gate MOSFET FEATURES l Trench Power MOSFET Technology l Low RDS(ON) l Low Gate Charge l Optimized For Fast-switching Applications APPLICATIONS lDC/DC Converter l Ideal for high-frequency switching and synchronous rectification Device Marking and Package Information Device Package Marking CSP08N6P5 TO-220 CSP08N6P5 Absolute Maximum Ratings at Tj= 25 ... See More ⇒

Detailed specifications: CSFR7N60K , CSFR7N60D , CSFR7N60U , CSN03N2P2 , CSN03N3P9 , CSN04N1P5 , CSN06N3P6 , CSNC04N8P5 , AON7410 , CSP10N4P2 , CSP10N8P3 , CST08N50U , CST08N50D , CST08N50F , CST1N50DLU , CST1N50DLD , CST1N50DLF .

History: PJZ9NA90 | DMN3009LFVW

Keywords - CSP08N6P5 MOSFET specs

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