CSP08N6P5 MOSFET. Datasheet pdf. Equivalent
Type Designator: CSP08N6P5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 130 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 40 nC
trⓘ - Rise Time: 4.2 nS
Cossⓘ - Output Capacitance: 420 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO-220
CSP08N6P5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CSP08N6P5 Datasheet (PDF)
..1. Size:667K convert
csp08n6p5.pdf
csp08n6p5.pdf
CSP08N6P580V N-Channel Split Gate MOSFETFEATURESl Trench Power MOSFET Technologyl Low RDS(ON)l Low Gate Chargel Optimized For Fast-switching ApplicationsAPPLICATIONSlDC/DC Converterl Ideal for high-frequency switching and synchronous rectificationDevice Marking and Package InformationDevice Package MarkingCSP08N6P5 TO-220 CSP08N6P5Absolute Maximum Ratings at Tj= 25
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
