All MOSFET. CSP08N6P5 Datasheet

 

CSP08N6P5 Datasheet and Replacement


   Type Designator: CSP08N6P5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4.2 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-220
 

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CSP08N6P5 Datasheet (PDF)

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CSP08N6P5

CSP08N6P580V N-Channel Split Gate MOSFETFEATURESl Trench Power MOSFET Technologyl Low RDS(ON)l Low Gate Chargel Optimized For Fast-switching ApplicationsAPPLICATIONSlDC/DC Converterl Ideal for high-frequency switching and synchronous rectificationDevice Marking and Package InformationDevice Package MarkingCSP08N6P5 TO-220 CSP08N6P5Absolute Maximum Ratings at Tj= 25

Datasheet: CSFR7N60K , CSFR7N60D , CSFR7N60U , CSN03N2P2 , CSN03N3P9 , CSN04N1P5 , CSN06N3P6 , CSNC04N8P5 , RFP50N06 , CSP10N4P2 , CSP10N8P3 , CST08N50U , CST08N50D , CST08N50F , CST1N50DLU , CST1N50DLD , CST1N50DLF .

History: OSG70R1K4FF | PMZ320UPE | SLD60R380S2 | IXTA4N150HV

Keywords - CSP08N6P5 MOSFET datasheet

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