All MOSFET. CST08N50D Datasheet

 

CST08N50D Datasheet and Replacement


   Type Designator: CST08N50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.9 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm
   Package: TO-252
 

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CST08N50D Datasheet (PDF)

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CST08N50D

nvertSuzhou Convert Semiconductor Co ., Ltd.CST08N50U, CST08N50D,CST08N50F500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCST08N50U TO-251

Datasheet: CSN03N3P9 , CSN04N1P5 , CSN06N3P6 , CSNC04N8P5 , CSP08N6P5 , CSP10N4P2 , CSP10N8P3 , CST08N50U , IRF1407 , CST08N50F , CST1N50DLU , CST1N50DLD , CST1N50DLF , CST30N10F , CST30N10U , CST30N10D , CST30N10P .

History: SWP056R68E7T | NTD32N06L | VBZA9926 | CS4N100V | AP6N3R0LMT | HMS21N60 | GP2M013A050F

Keywords - CST08N50D MOSFET datasheet

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