All MOSFET. CTB06N005 Datasheet

 

CTB06N005 Datasheet and Replacement


   Type Designator: CTB06N005
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 135 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 443 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO-263
 

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CTB06N005 Datasheet (PDF)

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 ctb06n005 ctp06n005.pdf pdf_icon

CTB06N005

nvertCTB06N005,CTP06N005Suzhou Convert Semiconductor Co ., Ltd.68V N-Channel Trench MOSFETFEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching ApplicationsAPPLICATIONS DC/DC Converters Synchronous RectificationDevice Marking and Package InformationDevice Package MarkingCTB06N005 TO-263 CTB06N005CTP06N005

 8.1. Size:823K  convert
 ctd06n7p5 ctb06n7p5 ctp06n7p5.pdf pdf_icon

CTB06N005

nvertSuzhou Convert Semiconductor Co ., Ltd.CTD06N7P5, CTB06N7P5,CTP06N7P568V N-Channel Trench MOSFETFEATURESTrench Power DTMOS technologyLow RDS(ON)Low Gate ChargeOptimized for fast-switching applicationsAPPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and IndustrialDevice Marking and Package Inf

Datasheet: CST1N50DLD , CST1N50DLF , CST30N10F , CST30N10U , CST30N10D , CST30N10P , CST9N20LF , CST9N20LP , 10N65 , CTP06N005 , CTD02N004 , CTD02N007 , CTD02N4P8 , CTD03N003 , CTD03N005 , CTD03N10P5 , CTD03N3P3 .

History: DMP3020LSS | IRF7739L1 | PHB66NQ03LT

Keywords - CTB06N005 MOSFET datasheet

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