CTB06N005 Specs and Replacement

Type Designator: CTB06N005

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 135 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 443 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO-263

CTB06N005 substitution

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CTB06N005 datasheet

 ..1. Size:661K  convert
 ctb06n005 ctp06n005.pdf pdf_icon

CTB06N005

nvert CTB06N005,CTP06N005 Suzhou Convert Semiconductor Co ., Ltd. 68V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS DC/DC Converters Synchronous Rectification Device Marking and Package Information Device Package Marking CTB06N005 TO-263 CTB06N005 CTP06N005... See More ⇒

 8.1. Size:823K  convert
 ctd06n7p5 ctb06n7p5 ctp06n7p5.pdf pdf_icon

CTB06N005

nvert Suzhou Convert Semiconductor Co ., Ltd. CTD06N7P5, CTB06N7P5,CTP06N7P5 68V N-Channel Trench MOSFET FEATURES Trench Power DTMOS technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Inf... See More ⇒

Detailed specifications: CST1N50DLD, CST1N50DLF, CST30N10F, CST30N10U, CST30N10D, CST30N10P, CST9N20LF, CST9N20LP, 4N60, CTP06N005, CTD02N004, CTD02N007, CTD02N4P8, CTD03N003, CTD03N005, CTD03N10P5, CTD03N3P3

Keywords - CTB06N005 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.