CTB06N7P5 Specs and Replacement

Type Designator: CTB06N7P5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 95 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 94 nS

Cossⓘ - Output Capacitance: 274 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO-263

CTB06N7P5 substitution

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CTB06N7P5 datasheet

 ..1. Size:823K  convert
 ctd06n7p5 ctb06n7p5 ctp06n7p5.pdf pdf_icon

CTB06N7P5

nvert Suzhou Convert Semiconductor Co ., Ltd. CTD06N7P5, CTB06N7P5,CTP06N7P5 68V N-Channel Trench MOSFET FEATURES Trench Power DTMOS technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Inf... See More ⇒

 8.1. Size:661K  convert
 ctb06n005 ctp06n005.pdf pdf_icon

CTB06N7P5

nvert CTB06N005,CTP06N005 Suzhou Convert Semiconductor Co ., Ltd. 68V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS DC/DC Converters Synchronous Rectification Device Marking and Package Information Device Package Marking CTB06N005 TO-263 CTB06N005 CTP06N005... See More ⇒

Detailed specifications: CTD04N004, CTD04N11P5, CTD04N5P5, CTD04N7P5, CTD06N017, CTD06N030, CTD06N070, CTD06N7P5, IRF1405, CTP06N7P5, CTD10N033, CTD10N100, CTD10P650, CTN04N7P5, CTN04PN035, CTP03N2P7, CTP06N6P8

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