All MOSFET. CTP03N2P7 Datasheet


CTP03N2P7 MOSFET. Datasheet pdf. Equivalent

Type Designator: CTP03N2P7

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 187 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 230 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 56.9 nC

Rise Time (tr): 6.3 nS

Drain-Source Capacitance (Cd): 720 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0027 Ohm

Package: TO-220

CTP03N2P7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


CTP03N2P7 Datasheet (PDF)

0.1. ctp03n2p7.pdf Size:698K _convert


nvertCTP03N2P7Suzhou Convert Semiconductor Co ., Ltd.30V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and

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