CTP03N2P7 MOSFET. Datasheet pdf. Equivalent
Type Designator: CTP03N2P7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 187 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 230 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 56.9 nC
Rise Time (tr): 6.3 nS
Drain-Source Capacitance (Cd): 720 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0027 Ohm
Package: TO-220
CTP03N2P7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CTP03N2P7 Datasheet (PDF)
0.1. ctp03n2p7.pdf 
Size:698K _convert
nvertCTP03N2P7Suzhou Convert Semiconductor Co ., Ltd.30V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and
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