All MOSFET. SSH45N20A Datasheet

 

SSH45N20A Datasheet and Replacement


   Type Designator: SSH45N20A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 530 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TO3P
 

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SSH45N20A Datasheet (PDF)

 ..1. Size:211K  samsung
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SSH45N20A

SSH45N20AAdvanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.065 Rugged Gate Oxide Technology Lower Input CapacitanceID = 45 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.054 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol

Datasheet: SSH25N40 , SSH25N40A , SSH3N70 , SSH3N70A , SSH40N15 , SSH40N15A , SSH40N20 , SSH40N20A , 2N7000 , SSH4N70 , SSH4N70A , SSH4N80AS , SSH4N90AS , SSH5N80A , SSH5N90A , SSH60N06 , SSH60N06A .

History: SSB80R380S | SSB65R360S2

Keywords - SSH45N20A MOSFET datasheet

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