SSH45N20A PDF and Equivalents Search

 

SSH45N20A Specs and Replacement

Type Designator: SSH45N20A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 278 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 530 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TO3P

SSH45N20A substitution

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SSH45N20A datasheet

 ..1. Size:211K  samsung
 ssh45n20a.pdf pdf_icon

SSH45N20A

SSH45N20A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.065 Rugged Gate Oxide Technology Lower Input Capacitance ID = 45 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.054 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol ... See More ⇒

Detailed specifications: SSH25N40, SSH25N40A, SSH3N70, SSH3N70A, SSH40N15, SSH40N15A, SSH40N20, SSH40N20A, AON7408, SSH4N70, SSH4N70A, SSH4N80AS, SSH4N90AS, SSH5N80A, SSH5N90A, SSH60N06, SSH60N06A

Keywords - SSH45N20A MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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