All MOSFET. CTP10P095 Datasheet

 

CTP10P095 Datasheet and Replacement


   Type Designator: CTP10P095
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 27.4 nS
   Cossⓘ - Output Capacitance: 129 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO-220
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CTP10P095 Datasheet (PDF)

 ..1. Size:511K  convert
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CTP10P095

nvertCTP10P095Suzhou Convert Semiconductor Co ., Ltd.100V P-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an

 9.1. Size:610K  convert
 ctp10n066.pdf pdf_icon

CTP10P095

nvertCTP10N066Suzhou Convert Semiconductor Co ., Ltd.100V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an

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History: APT4014SVFRG | SSW65R190S2 | NCE30P12BS | WMM07N65C4 | APT10021JFLL | NP180N04TUJ | SM4186T9RL

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