CTP10P095 PDF and Equivalents Search

 

CTP10P095 Specs and Replacement


   Type Designator: CTP10P095
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   Qg ⓘ - Total Gate Charge: 44.5 nC
   tr ⓘ - Rise Time: 27.4 nS
   Cossⓘ - Output Capacitance: 129 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO-220
 

 CTP10P095 substitution

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CTP10P095 datasheet

 ..1. Size:511K  convert
ctp10p095.pdf pdf_icon

CTP10P095

nvert CTP10P095 Suzhou Convert Semiconductor Co ., Ltd. 100V P-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an... See More ⇒

 9.1. Size:610K  convert
ctp10n066.pdf pdf_icon

CTP10P095

nvert CTP10N066 Suzhou Convert Semiconductor Co ., Ltd. 100V N-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an... See More ⇒

Detailed specifications: CTD10N033 , CTD10N100 , CTD10P650 , CTN04N7P5 , CTN04PN035 , CTP03N2P7 , CTP06N6P8 , CTP10N066 , EMB04N03H , CTQ06N085 , CTS03P015 , CTS03PP055 , CTU03N8P5 , CTU10P060 , CTU20N170 , CTU20N700 , CTZ2302A .

Keywords - CTP10P095 MOSFET specs

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