CTP10P095 Specs and Replacement
Type Designator: CTP10P095
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
Qg ⓘ - Total Gate Charge: 44.5 nC
tr ⓘ - Rise Time: 27.4 nS
Cossⓘ - Output Capacitance: 129 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: TO-220
CTP10P095 substitution
CTP10P095 datasheet
ctp10p095.pdf
nvert CTP10P095 Suzhou Convert Semiconductor Co ., Ltd. 100V P-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an... See More ⇒
ctp10n066.pdf
nvert CTP10N066 Suzhou Convert Semiconductor Co ., Ltd. 100V N-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an... See More ⇒
Detailed specifications: CTD10N033 , CTD10N100 , CTD10P650 , CTN04N7P5 , CTN04PN035 , CTP03N2P7 , CTP06N6P8 , CTP10N066 , EMB04N03H , CTQ06N085 , CTS03P015 , CTS03PP055 , CTU03N8P5 , CTU10P060 , CTU20N170 , CTU20N700 , CTZ2302A .
Keywords - CTP10P095 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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