CTU03N8P5 Datasheet and Replacement
Type Designator: CTU03N8P5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 12.2 nS
Cossⓘ - Output Capacitance: 163 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO-251
CTU03N8P5 substitution
CTU03N8P5 Datasheet (PDF)
ctu03n8p5.pdf

nvertCTU03N8P5Suzhou Convert Semiconductor Co ., Ltd.30V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and
Datasheet: CTN04PN035 , CTP03N2P7 , CTP06N6P8 , CTP10N066 , CTP10P095 , CTQ06N085 , CTS03P015 , CTS03PP055 , AO3407 , CTU10P060 , CTU20N170 , CTU20N700 , CTZ2302A , CTZ2305A , CTZ2312A , CJ2324 , CJ3134KDW .
History: CS10N65FF | IPAN60R650CE
Keywords - CTU03N8P5 MOSFET datasheet
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History: CS10N65FF | IPAN60R650CE



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