CTU20N170 Datasheet and Replacement
Type Designator: CTU20N170
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 8.2 nS
Cossⓘ - Output Capacitance: 109 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: TO-251
- MOSFET Cross-Reference Search
CTU20N170 Datasheet (PDF)
ctu20n170.pdf

nvertSuzhou Convert Semiconductor Co ., Ltd.CTU20N170200V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and high frequency cir
ctu20n700.pdf

nvertSuzhou Convert Semiconductor Co ., Ltd.CTU20N700200V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Power switching application Uninterruptible Power Supply Hard switched and high frequency circuitsDev
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SK3700 | IPB22N03S4L-15 | LSC65R280HT
Keywords - CTU20N170 MOSFET datasheet
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History: 2SK3700 | IPB22N03S4L-15 | LSC65R280HT



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