All MOSFET. CTU20N170 Datasheet

 

CTU20N170 MOSFET. Datasheet pdf. Equivalent

Type Designator: CTU20N170

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 83 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 45 nC

Rise Time (tr): 8.2 nS

Drain-Source Capacitance (Cd): 109 pF

Maximum Drain-Source On-State Resistance (Rds): 0.17 Ohm

Package: TO-251

CTU20N170 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CTU20N170 Datasheet (PDF)

0.1. ctu20n170.pdf Size:752K _convert

CTU20N170
CTU20N170

nvertSuzhou Convert Semiconductor Co ., Ltd.CTU20N170200V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and high frequency cir

8.1. ctu20n700.pdf Size:987K _convert

CTU20N170
CTU20N170

nvertSuzhou Convert Semiconductor Co ., Ltd.CTU20N700200V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Power switching application Uninterruptible Power Supply Hard switched and high frequency circuitsDev

 

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