CTU20N170 Datasheet. Specs and Replacement
Type Designator: CTU20N170 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.2 nS
Cossⓘ - Output Capacitance: 109 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: TO-251
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CTU20N170 substitution
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CTU20N170 datasheet
ctu20n170.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CTU20N170 200V N-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and high frequency cir... See More ⇒
ctu20n700.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CTU20N700 200V N-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Power switching application Uninterruptible Power Supply Hard switched and high frequency circuits Dev... See More ⇒
Detailed specifications: CTP06N6P8, CTP10N066, CTP10P095, CTQ06N085, CTS03P015, CTS03PP055, CTU03N8P5, CTU10P060, IRFP064N, CTU20N700, CTZ2302A, CTZ2305A, CTZ2312A, CJ2324, CJ3134KDW, CJ3139KDW, CJ3434
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