CTZ2305A MOSFET. Datasheet pdf. Equivalent
Type Designator: CTZ2305A
Marking Code: 2305A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 4.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 6.1 nC
Rise Time (tr): 35 nS
Drain-Source Capacitance (Cd): 290 pF
Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm
Package: SOT23
CTZ2305A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CTZ2305A Datasheet (PDF)
0.1. ctz2305a.pdf 
Size:740K _convert
nvertCTZ2305ASuzhou Convert Semiconductor Co ., Ltd.20V P-Channel Trench MOSFETFEATURES Super Low Gate Charge RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Load Switch Power Management Pulse Width Modulation(PWM)Device Marking and Package InformationDevice Packa
8.1. ctz2302a.pdf Size:791K _convert
nvertCTZ2302ASuzhou Convert Semiconductor Co ., Ltd.20V N-Channel Trench MOSFETFEATURES Super Low Gate Charge RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Load switch Battery protection Power managementDevice Marking and Package InformationDevice Package Markin
9.1. ctz2312a.pdf Size:1137K _convert
nvertCTZ2312ASuzhou Convert Semiconductor Co ., Ltd.20V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Corre
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