CJ4459 Datasheet and Replacement
Type Designator: CJ4459
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 130(max) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
Package: SOT23
CJ4459 substitution
CJ4459 Datasheet (PDF)
cj4459.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDJIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS SOT-23 Plastic-Encapsulate MOSFETSCJ4459 P-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 46m@-10V-30V3-5A72m@-4.5V1. GATE 122. SOURCE DESCRIPTION The CJ4459 combines advanced trench MOSFET technology 3. DRAIN with a
Datasheet: CTZ2302A , CTZ2305A , CTZ2312A , CJ2324 , CJ3134KDW , CJ3139KDW , CJ3434 , CJ3439KDW , 50N06 , CJ7252KDW , CJA03N10S , CJAA3134K , CJAA3139K , CJAB20N03 , CJAB20SN06 , CJAB25N03 , CJAB25N04 .
History: APT6035SVFRG | IRFP3206 | 2N5515
Keywords - CJ4459 MOSFET datasheet
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History: APT6035SVFRG | IRFP3206 | 2N5515
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