All MOSFET. CJ4459 Datasheet

 

CJ4459 Datasheet and Replacement


   Type Designator: CJ4459
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 130(max) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: SOT23
 

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CJ4459 Datasheet (PDF)

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CJ4459

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDJIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS SOT-23 Plastic-Encapsulate MOSFETSCJ4459 P-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 46m@-10V-30V3-5A72m@-4.5V1. GATE 122. SOURCE DESCRIPTION The CJ4459 combines advanced trench MOSFET technology 3. DRAIN with a

Datasheet: CTZ2302A , CTZ2305A , CTZ2312A , CJ2324 , CJ3134KDW , CJ3139KDW , CJ3434 , CJ3439KDW , 50N06 , CJ7252KDW , CJA03N10S , CJAA3134K , CJAA3139K , CJAB20N03 , CJAB20SN06 , CJAB25N03 , CJAB25N04 .

History: AO4498E | DMG2302UK | UTT18P06 | AP8N3R5CMT | APT4018BN | GP2M004A065XG | SVS70R600SE3TR

Keywords - CJ4459 MOSFET datasheet

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