CJ7252KDW Specs and Replacement

Type Designator: CJ7252KDW

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 30 max pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.3 Ohm

Package: SOT363

CJ7252KDW substitution

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CJ7252KDW datasheet

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CJ7252KDW

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs CJ7252KDW N Channel + P Channel Power MOSFET ID V(BR)DSS RDS(on)MAX SOT-363 5 @10V 60 V 0.34A 5.3 @4.5V 8 @-10V -50 V -0.18A 10 @-5V DESCRIPTION This N Channel + P Channel MOSFET has been designed using advanced power trench process to optimize the RDS(ON). FEATURE APPL... See More ⇒

Detailed specifications: CTZ2305A, CTZ2312A, CJ2324, CJ3134KDW, CJ3139KDW, CJ3434, CJ3439KDW, CJ4459, IRFP460, CJA03N10S, CJAA3134K, CJAA3139K, CJAB20N03, CJAB20SN06, CJAB25N03, CJAB25N04, CJAB25P03

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