All MOSFET. CJ7252KDW Datasheet

 

CJ7252KDW Datasheet and Replacement


   Type Designator: CJ7252KDW
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.34 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 30(max) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5.3 Ohm
   Package: SOT363
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CJ7252KDW Datasheet (PDF)

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CJ7252KDW

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETsCJ7252KDW N Channel + P Channel Power MOSFET ID V(BR)DSS RDS(on)MAX SOT-363 5@10V 60 V0.34A5.3@4.5V8@-10V-50V-0.18A 10@-5VDESCRIPTION This N Channel + P Channel MOSFET has been designed using advanced power trench process to optimize the RDS(ON). FEATURE APPL

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: MTN12N65FP | SSW65R190S2 | DMP510DL | WMM07N65C4 | NP180N04TUJ | NCE30P12BS | APT10021JFLL

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