All MOSFET. CJAB20N03 Datasheet

 

CJAB20N03 Datasheet and Replacement


   Type Designator: CJAB20N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8(max) nS
   Cossⓘ - Output Capacitance: 138 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: PDFNWB3.3X3.3-8L
 

 CJAB20N03 substitution

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CJAB20N03 Datasheet (PDF)

 ..1. Size:2126K  1
 cjab20n03.pdf pdf_icon

CJAB20N03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB20N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYPPD F NWB3.33.3-8L8.5m@10V30 V20A12m@4.5VDESCRIPTION The CJAB20N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEA

 ..2. Size:2126K  jiangsu
 cjab20n03.pdf pdf_icon

CJAB20N03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB20N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYPPD F NWB3.33.3-8L8.5m@10V30 V20A12m@4.5VDESCRIPTION The CJAB20N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEA

 8.1. Size:1226K  1
 cjab20sn06.pdf pdf_icon

CJAB20N03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNDFNWB33-8L Plastic-Encapsulate MOSFETS CJAB20SN06 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPD F NWB33-8L8m@10V60V 20A9.7m@4.5VDESCRIPTION The CJAB20SN06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES

 8.2. Size:1226K  jiangsu
 cjab20sn06.pdf pdf_icon

CJAB20N03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNDFNWB33-8L Plastic-Encapsulate MOSFETS CJAB20SN06 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPD F NWB33-8L8m@10V60V 20A9.7m@4.5VDESCRIPTION The CJAB20SN06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES

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Datasheet: CJ3139KDW , CJ3434 , CJ3439KDW , CJ4459 , CJ7252KDW , CJA03N10S , CJAA3134K , CJAA3139K , IRFP260N , CJAB20SN06 , CJAB25N03 , CJAB25N04 , CJAB25P03 , CJAB25SN06 , CJAB35P03 , CJAB40N03 , CJAB40SN10 .

History: PHB66NQ03LT | IRF7739L1 | DMP3020LSS

Keywords - CJAB20N03 MOSFET datasheet

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