CJAB20N03 Specs and Replacement

Type Designator: CJAB20N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 max nS

Cossⓘ - Output Capacitance: 138 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: PDFNWB3.3X3.3-8L

CJAB20N03 substitution

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CJAB20N03 datasheet

 ..1. Size:2126K  1
cjab20n03.pdf pdf_icon

CJAB20N03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L Plastic-Encapsulate MOSFETS CJAB20N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PD F NWB3.3 3.3-8L 8.5m @10V 30 V 20A 12m @4.5V DESCRIPTION The CJAB20N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEA... See More ⇒

 ..2. Size:2126K  jiangsu
cjab20n03.pdf pdf_icon

CJAB20N03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L Plastic-Encapsulate MOSFETS CJAB20N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PD F NWB3.3 3.3-8L 8.5m @10V 30 V 20A 12m @4.5V DESCRIPTION The CJAB20N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEA... See More ⇒

 8.1. Size:1226K  1
cjab20sn06.pdf pdf_icon

CJAB20N03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN DFNWB3 3-8L Plastic-Encapsulate MOSFETS CJAB20SN06 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP D F NWB3 3-8L 8m @10V 60V 20A 9.7m @4.5V DESCRIPTION The CJAB20SN06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES ... See More ⇒

 8.2. Size:1226K  jiangsu
cjab20sn06.pdf pdf_icon

CJAB20N03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN DFNWB3 3-8L Plastic-Encapsulate MOSFETS CJAB20SN06 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP D F NWB3 3-8L 8m @10V 60V 20A 9.7m @4.5V DESCRIPTION The CJAB20SN06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES ... See More ⇒

Detailed specifications: CJ3139KDW, CJ3434, CJ3439KDW, CJ4459, CJ7252KDW, CJA03N10S, CJAA3134K, CJAA3139K, IRLZ44N, CJAB20SN06, CJAB25N03, CJAB25N04, CJAB25P03, CJAB25SN06, CJAB35P03, CJAB40N03, CJAB40SN10

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.