CJAB20N03
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CJAB20N03
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 20
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 20
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 8(max)
ns
Cossⓘ - Выходная емкость: 138
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.012
Ohm
Тип корпуса: PDFNWB3.3X3.3-8L
Аналог (замена) для CJAB20N03
-
подбор ⓘ MOSFET транзистора по параметрам
CJAB20N03
Datasheet (PDF)
..1. Size:2126K 1
cjab20n03.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB20N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYPPD F NWB3.33.3-8L8.5m@10V30 V20A12m@4.5VDESCRIPTION The CJAB20N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEA
..2. Size:2126K jiangsu
cjab20n03.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB20N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYPPD F NWB3.33.3-8L8.5m@10V30 V20A12m@4.5VDESCRIPTION The CJAB20N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEA
8.1. Size:1226K 1
cjab20sn06.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNDFNWB33-8L Plastic-Encapsulate MOSFETS CJAB20SN06 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPD F NWB33-8L8m@10V60V 20A9.7m@4.5VDESCRIPTION The CJAB20SN06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES
8.2. Size:1226K jiangsu
cjab20sn06.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNDFNWB33-8L Plastic-Encapsulate MOSFETS CJAB20SN06 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPD F NWB33-8L8m@10V60V 20A9.7m@4.5VDESCRIPTION The CJAB20SN06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES
9.1. Size:2997K 1
cjab25n03.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.33.3-8L 10m@10V30 V25A14m@4.5VDESCRIPTION The CJAB25N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications F
9.2. Size:1555K 1
cjab25p03.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25P03 P-Channel Power MOSFET ID PDFNWB3.33.3-8L V(BR)DSS RDS(on)MAX -25A-30V20m@-10VDESCRIPTION The CJAB25P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES
9.3. Size:1326K 1
cjab25sn06.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25SN06 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFNWB3.33.3-8L 13.5m@10V65V25A23.0m@4.5VDESCRIPTION The CJAB25SN06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
9.4. Size:1122K 1
cjab25n04.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25N04 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.33.3-8L 9.5m@10V40V25A16m@4.5VDESCRIPTION The CJAB25N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEAT
9.5. Size:2997K jiangsu
cjab25n03.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.33.3-8L 10m@10V30 V25A14m@4.5VDESCRIPTION The CJAB25N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications F
9.6. Size:1555K jiangsu
cjab25p03.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25P03 P-Channel Power MOSFET ID PDFNWB3.33.3-8L V(BR)DSS RDS(on)MAX -25A-30V20m@-10VDESCRIPTION The CJAB25P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES
9.7. Size:1326K jiangsu
cjab25sn06.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25SN06 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFNWB3.33.3-8L 13.5m@10V65V25A23.0m@4.5VDESCRIPTION The CJAB25SN06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
9.8. Size:1122K jiangsu
cjab25n04.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25N04 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.33.3-8L 9.5m@10V40V25A16m@4.5VDESCRIPTION The CJAB25N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEAT
Другие MOSFET... CJ3139KDW
, CJ3434
, CJ3439KDW
, CJ4459
, CJ7252KDW
, CJA03N10S
, CJAA3134K
, CJAA3139K
, IRFP260N
, CJAB20SN06
, CJAB25N03
, CJAB25N04
, CJAB25P03
, CJAB25SN06
, CJAB35P03
, CJAB40N03
, CJAB40SN10
.
