All MOSFET. CJAB25P03 Datasheet

 

CJAB25P03 Datasheet and Replacement


   Type Designator: CJAB25P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 296 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: PDFNWB3.3X3.3-8L
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CJAB25P03 Datasheet (PDF)

 ..1. Size:1555K  1
 cjab25p03.pdf pdf_icon

CJAB25P03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25P03 P-Channel Power MOSFET ID PDFNWB3.33.3-8L V(BR)DSS RDS(on)MAX -25A-30V20m@-10VDESCRIPTION The CJAB25P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES

 ..2. Size:1555K  jiangsu
 cjab25p03.pdf pdf_icon

CJAB25P03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25P03 P-Channel Power MOSFET ID PDFNWB3.33.3-8L V(BR)DSS RDS(on)MAX -25A-30V20m@-10VDESCRIPTION The CJAB25P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES

 8.1. Size:2997K  1
 cjab25n03.pdf pdf_icon

CJAB25P03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.33.3-8L 10m@10V30 V25A14m@4.5VDESCRIPTION The CJAB25N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications F

 8.2. Size:1326K  1
 cjab25sn06.pdf pdf_icon

CJAB25P03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25SN06 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFNWB3.33.3-8L 13.5m@10V65V25A23.0m@4.5VDESCRIPTION The CJAB25SN06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications

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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AM10N30-600I | HLML6401 | SM6A08NSU | IRF242 | IPB60R045P7 | HU60P03 | AP85T03GH-HF

Keywords - CJAB25P03 MOSFET datasheet

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